Abstract
The epitactic growth of calcium hexaluminate (CA6) on the basal plane of alumina was observed during an investigation of the interaction between silicate glass films deposited on single-crystal alumina (α-Al2O3). Two distinctly different orientation relationships occurred. The first can be described as perfect hexagon-on-hexagon epitaxy with (1120)CA6∥(1010)Al2O3 and (0001)Al2O3∥(0001)CA6. This relationship has 1.1% lattice misfit in the substrate plane; the misfit is accommodated at the interface by a hexagonal network of misfit dislocations. In the second relationship the CA6 grains are rotated about the substrate normal and can be explained by the coincident-site lattice model for phase boundaries. Both orientation relationships emphasize the influence of substrate crystallography on the crystallization process. © 1998 Taylor and Francis Group, LLC.
| Original language | English |
|---|---|
| Pages (from-to) | 561-575 |
| Number of pages | 15 |
| Journal | Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties |
| Volume | 77 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jan 1 1998 |
| Externally published | Yes |
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