Abstract
A new class of semiconductor laser is presented that does not require p-n junctions. Spectral narrowing, lasing thresholds, beam divergence, temporal narrowing, and energies are shown for these lasers based on current filaments in bulk GaAs.
| Original language | English |
|---|---|
| Title of host publication | Optics InfoBase Conference Papers |
| State | Published - Jan 1 2000 |
| Externally published | Yes |
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