Damage equivalence of heavy ions in silicon bipolar junction transistors

E. Bielejec; G. Vizkelethy; N. R. Kolb; D. B. King; B. L. Doyle

doi:10.1109/TNS.2006.886231

Damage equivalence of heavy ions in silicon bipolar junction transistors

E. Bielejec
, G. Vizkelethy
, N. R. Kolb
, D. B. King
, B. L. Doyle

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

25 Scopus citations

Abstract

Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions. © 2006 IEEE.

Original language	English
Title of host publication	IEEE Transactions on Nuclear Science
Pages	3681-3686
Number of pages	6
Volume	53
Edition	6
DOIs	https://doi.org/10.1109/TNS.2006.886231
State	Published - Dec 1 2006
Externally published	Yes

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10.1109/TNS.2006.886231

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title = "Damage equivalence of heavy ions in silicon bipolar junction transistors",

abstract = "Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions. {\textcopyright} 2006 IEEE.",

author = "E. Bielejec and G. Vizkelethy and Kolb, \{N. R.\} and King, \{D. B.\} and Doyle, \{B. L.\}",

year = "2006",

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T1 - Damage equivalence of heavy ions in silicon bipolar junction transistors

AU - Bielejec, E.

AU - Vizkelethy, G.

AU - Kolb, N. R.

AU - King, D. B.

AU - Doyle, B. L.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions. © 2006 IEEE.

AB - Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions. © 2006 IEEE.

UR - https://www.scopus.com/pages/publications/33846305721

U2 - 10.1109/TNS.2006.886231

DO - 10.1109/TNS.2006.886231

M3 - Conference contribution

VL - 53

SP - 3681

EP - 3686

BT - IEEE Transactions on Nuclear Science

ER -

Damage equivalence of heavy ions in silicon bipolar junction transistors

Abstract

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