Skip to main navigation Skip to search Skip to main content

Dark-State-Based Low-Loss Metasurfaces with Simultaneous Electric and Magnetic Resonant Response

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The realization of metamaterials or metasurfaces with simultaneous electric and magnetic response and low loss is generally very challenging at optical frequencies. Traditional approaches using nanoresonators made of noble metals, while suitable for the microwave and terahertz regimes, fail at frequencies above the near-infrared, due to prohibitive high dissipative losses and the breakdown of scaling resulting from the electron mass contribution (kinetic inductance) to the effective reactance of these plasmonic meta-atoms. The alternative route based on Mie resonances of high-index dielectric particles normally leads to structure sizes that tend to break the effective-medium approximation. Here, we propose a subwavelength dark-state-based metasurface, which enables configurable simultaneous electric and magnetic responses with low loss. Proof-of-concept metasurface samples, specifically designed around telecommunication wavelengths (i.e., λ ≈ 1.5 μm), were fabricated and investigated experimentally to validate our theoretical concept. Because the electromagnetic field energy is localized and stored predominantly inside a dark resonant dielectric bound state, the proposed metasurfaces can overcome the loss issue associated with plasmonic resonators made of noble metals and enable scaling to very high operation frequency without suffering from saturation of the resonance frequency due to the kinetic inductance of the electrons.
Original languageEnglish
Pages (from-to)241-248
Number of pages8
JournalACS Photonics
Volume7
Issue number1
DOIs
StatePublished - Jan 15 2020
Externally publishedYes

Fingerprint

Dive into the research topics of 'Dark-State-Based Low-Loss Metasurfaces with Simultaneous Electric and Magnetic Resonant Response'. Together they form a unique fingerprint.

Cite this