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Defect Healing in Layered Materials: A Machine Learning-Assisted Characterization of MoS<inf>2</inf> Crystal Phases

  • Sungwook Hong
  • , Ken Ichi Nomura
  • , Aravind Krishnamoorthy
  • , Pankaj Rajak
  • , Chunyang Sheng
  • , Rajiv K. Kalia
  • , Aiichiro Nakano
  • , Priya Vashishta

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Monolayer MoS2 is an outstanding candidate for a next-generation semiconducting material because of its exceptional physical, chemical, and mechanical properties. To make this promising layered material applicable to nanostructured electronic applications, synthesis of a highly crystalline MoS2 monolayer is vitally important. Among different types of synthesis methods, chemical vapor deposition (CVD) is the most practical way to synthesize few- or mono-layer MoS2 on the target substrate owing to its simplicity and scalability. However, synthesis of a highly crystalline MoS2 layer remains elusive. This is because of the number of grains and defects unavoidably generated during CVD synthesis. Here, we perform multimillion-atom reactive molecular dynamics (RMD) simulations to identify an origin of the grain growth, migration, and defect healing process on a CVD-grown MoS2 monolayer. RMD results reveal that grain boundaries could be successfully repaired by multiple heat treatments. Our work proposes a new way of controlling the grain growth and migration on a CVD-grown MoS2 monolayer.
Original languageEnglish
Pages (from-to)2739-2744
Number of pages6
JournalJournal of Physical Chemistry Letters
Volume10
Issue number11
DOIs
StatePublished - Jun 6 2019
Externally publishedYes

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