DEFECT STRUCTURE OF ION-IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.

B. C. DeCooman; C. B. Carter; J. Ralston; G. W. Wicks; L. F. Eastman

DEFECT STRUCTURE OF ION-IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.

B. C. DeCooman
, C. B. Carter
, J. Ralston
, G. W. Wicks
, L. F. Eastman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Cross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed Al//xGa//1// minus //xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Pages	333-338
Number of pages	6
Volume	56
State	Published - Dec 1 1986
Externally published	Yes

Cite this

@inproceedings{eddcebf1244e469c94c04f3f338d83bb,

title = "DEFECT STRUCTURE OF ION-IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.",

abstract = "Cross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed Al//xGa//1// minus //xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.",

author = "DeCooman, \{B. C.\} and Carter, \{C. B.\} and J. Ralston and Wicks, \{G. W.\} and Eastman, \{L. F.\}",

year = "1986",

month = dec,

day = "1",

language = "English",

isbn = "0931837219",

volume = "56",

pages = "333--338",

booktitle = "Materials Research Society Symposia Proceedings",

}

TY - GEN

T1 - DEFECT STRUCTURE OF ION-IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.

AU - DeCooman, B. C.

AU - Carter, C. B.

AU - Ralston, J.

AU - Wicks, G. W.

AU - Eastman, L. F.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Cross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed Al//xGa//1// minus //xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.

AB - Cross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed Al//xGa//1// minus //xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.

UR - https://www.scopus.com/pages/publications/0022918793

M3 - Conference contribution

SN - 0931837219

VL - 56

SP - 333

EP - 338

BT - Materials Research Society Symposia Proceedings

ER -

DEFECT STRUCTURE OF ION-IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.

Abstract

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