Demonstration of the effects of interface strain on band offsets in lattice-matched III-V semiconductor superlattices

J. S. Nelson; S. R. Kurtz; L. R. Dawson; J. A. Lott

doi:10.1063/1.103626

Demonstration of the effects of interface strain on band offsets in lattice-matched III-V semiconductor superlattices

J. S. Nelson
, S. R. Kurtz
, L. R. Dawson
, J. A. Lott

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A first principles total energy self-consistent pseudopotential calculation is used to predict the band offset in the lattice-matched superlattice InAs/Al0.8Ga0.2As0.14Sb0.86. We find that inclusion of interface strain changes the character of the band offset from nominally type II to strongly type II. The predicted band offset at the minimum energy configuration is in excellent agreement with the value determined from infrared photoluminescence measurements.

Original language	English
Pages (from-to)	578-580
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	6
DOIs	https://doi.org/10.1063/1.103626
State	Published - Dec 1 1990
Externally published	Yes

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10.1063/1.103626

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title = "Demonstration of the effects of interface strain on band offsets in lattice-matched III-V semiconductor superlattices",

abstract = "A first principles total energy self-consistent pseudopotential calculation is used to predict the band offset in the lattice-matched superlattice InAs/Al0.8Ga0.2As0.14Sb0.86. We find that inclusion of interface strain changes the character of the band offset from nominally type II to strongly type II. The predicted band offset at the minimum energy configuration is in excellent agreement with the value determined from infrared photoluminescence measurements.",

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AU - Nelson, J. S.

AU - Kurtz, S. R.

AU - Dawson, L. R.

AU - Lott, J. A.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - A first principles total energy self-consistent pseudopotential calculation is used to predict the band offset in the lattice-matched superlattice InAs/Al0.8Ga0.2As0.14Sb0.86. We find that inclusion of interface strain changes the character of the band offset from nominally type II to strongly type II. The predicted band offset at the minimum energy configuration is in excellent agreement with the value determined from infrared photoluminescence measurements.

AB - A first principles total energy self-consistent pseudopotential calculation is used to predict the band offset in the lattice-matched superlattice InAs/Al0.8Ga0.2As0.14Sb0.86. We find that inclusion of interface strain changes the character of the band offset from nominally type II to strongly type II. The predicted band offset at the minimum energy configuration is in excellent agreement with the value determined from infrared photoluminescence measurements.

UR - https://www.scopus.com/pages/publications/0002922202

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DO - 10.1063/1.103626

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Demonstration of the effects of interface strain on band offsets in lattice-matched III-V semiconductor superlattices

Abstract

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