Design of high-performance memristor cell using W-implanted SiO₂ films

Highly reproducible bipolar resistance switching was demonstrated in a composite material of W-implanted silicon dioxide. Because of its excellent dielectric properties, SiO₂ was selected as the sole active material for fabricating the resistance switching devices. The device employed a metal-insulator-semiconductor structure, showing an excellent resistance switching performance (the ON/OFF ratio is close to ∼10⁶). In addition, this sandwich structure device shows a forming-free resistance switching behavior. The overall device performance of the SiO₂-based memristor has the potential to open up a new avenue to a large-scale high-performance resistive random access memory, which could significantly impact their existing applications.