Abstract
We investigated adsorbed Si dimers on Si(001) at ∼100°C with atom-tracking STM to determine the effect of various local environments on surface dynamics. Specifically, we find an asymmetry in the dimer diffusion along a buckled A-type step. We also measure dimer repulsion and attraction respectively from in-row and adjacent-row vacancy defects. These findings lend insight into the nature of the dimer-substrate bond and defect structure. © 1998 Published by Elsevier Science B.V. All rights reserved.
| Original language | English |
|---|---|
| Journal | Surface Science |
| Volume | 411 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Aug 11 1998 |
| Externally published | Yes |
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