Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As

Cory C. Bomberger; Laura R. Vanderhoef; Abdur Rahman; Deesha Shah; D. Bruce Chase; Antoinette J. Taylor; Abul K. Azad; Matthew F. Doty; Joshua M.O. Zide

doi:10.1063/1.4930816

Determining the band alignment of TbAs:GaAs and TbAs:In_0.53Ga_0.47As

Cory C. Bomberger
, Laura R. Vanderhoef
, Abdur Rahman
, Deesha Shah
, D. Bruce Chase
, Antoinette J. Taylor
, Abul K. Azad
, Matthew F. Doty
, Joshua M.O. Zide

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In_0.53Ga_0.47As host matrices. Fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In_0.53Ga_0.47As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a type I (straddling) heterojunction and the TbAs:In_0.53Ga_0.47As system forms a type II (staggered) heterojunction.

Original language	English
Article number	102103
Journal	Applied Physics Letters
Volume	107
Issue number	10
DOIs	https://doi.org/10.1063/1.4930816
State	Published - Sep 7 2015

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title = "Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As",

abstract = "We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In0.53Ga0.47As host matrices. Fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In0.53Ga0.47As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a type I (straddling) heterojunction and the TbAs:In0.53Ga0.47As system forms a type II (staggered) heterojunction.",

author = "Bomberger, \{Cory C.\} and Vanderhoef, \{Laura R.\} and Abdur Rahman and Deesha Shah and Chase, \{D. Bruce\} and Taylor, \{Antoinette J.\} and Azad, \{Abul K.\} and Doty, \{Matthew F.\} and Zide, \{Joshua M.O.\}",

year = "2015",

month = sep,

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doi = "10.1063/1.4930816",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As

AU - Bomberger, Cory C.

AU - Vanderhoef, Laura R.

AU - Rahman, Abdur

AU - Shah, Deesha

AU - Chase, D. Bruce

AU - Taylor, Antoinette J.

AU - Azad, Abul K.

AU - Doty, Matthew F.

AU - Zide, Joshua M.O.

PY - 2015/9/7

Y1 - 2015/9/7

N2 - We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In0.53Ga0.47As host matrices. Fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In0.53Ga0.47As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a type I (straddling) heterojunction and the TbAs:In0.53Ga0.47As system forms a type II (staggered) heterojunction.

AB - We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In0.53Ga0.47As host matrices. Fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In0.53Ga0.47As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a type I (straddling) heterojunction and the TbAs:In0.53Ga0.47As system forms a type II (staggered) heterojunction.

UR - https://www.scopus.com/pages/publications/84941299527

U2 - 10.1063/1.4930816

DO - 10.1063/1.4930816

M3 - Article

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102103

ER -

Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As

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Determining the band alignment of TbAs:GaAs and TbAs:In_0.53Ga_0.47As