Abstract
The development of a laboratory EUV lithography tool based on a laser plasma source, a 10x Schwarzschild camera, and a magnetically levitated wafer stage is presented. Interferometric measurements of the camera aberrations are incorporated into physical-optics simulations to estimate the EUV imaging performance of the camera. Experimental results demonstrate the successful matching of five multilayer reflecting surfaces, coated to specification for a wide range of figure and incidence angle requirements. High-resolution, 10x-reduction images of a reflection mask are shown.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Pages | 95-105 |
| Number of pages | 11 |
| Volume | 2194 |
| DOIs | |
| State | Published - Jan 1 1994 |
| Externally published | Yes |
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