Development of an analytical diffusion model for modeling hydrogen isotope exchange

Abstract We create a model for H retention depth profiles in W and subsequently model how this profile changes after isotope exchange. This is accomplished by calculating how trapping defects in W accumulate D (or H) inventory as W is being exposed to plasma. Each trapping site is characterized by a trapping rate and a release rate, where the only free parameters are the distribution of these trapping sites in the material. The filled trap concentrations for each trap type are modeled as a diffusion process because post-mortem deuterium depth profiles indicate that traps are filled well beyond the ion implantation zone (2-5 nm). Using this retention model, an isotope exchange rate is formulated. The retention model and isotope exchange rate are compared to low temperature isotope exchange experiments in tungsten with good agreement. The limitations of the current model highlight important physics and motivate future work.