Direct Electro-Optic Sampling of a Gaas Integrated circuit using a Gain-Switched Ingaasp Injection Laser

Antoinette Jane Taylor; R. S. Tucker; J. M. Wiesenfeld; C. A. Burrus; G. Eisenstein; J. R. Talman; S. S. Pei

doi:10.1049/el:19860732

Direct Electro-Optic Sampling of a Gaas Integrated circuit using a Gain-Switched Ingaasp Injection Laser

Antoinette Jane Taylor
, R. S. Tucker
, J. M. Wiesenfeld
, C. A. Burrus
, G. Eisenstein
, J. R. Talman
, S. S. Pei

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We demonstrate an electro-optic sampling system based on a gain-switched InGaAsP injection laser. The system has a temporal resolution of 18ps and is used for noninvasive probing of waveforms internal to a GaAs monolithic integrated circuit operating at 2-4 GHz.

Original language	English
Pages (from-to)	1068-1069
Number of pages	2
Journal	Electronics Letters
Volume	22
Issue number	20
DOIs	https://doi.org/10.1049/el:19860732
State	Published - Jan 1 1986

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title = "Direct Electro-Optic Sampling of a Gaas Integrated circuit using a Gain-Switched Ingaasp Injection Laser",

abstract = "We demonstrate an electro-optic sampling system based on a gain-switched InGaAsP injection laser. The system has a temporal resolution of 18ps and is used for noninvasive probing of waveforms internal to a GaAs monolithic integrated circuit operating at 2-4 GHz.",

author = "Taylor, \{Antoinette Jane\} and Tucker, \{R. S.\} and Wiesenfeld, \{J. M.\} and Burrus, \{C. A.\} and G. Eisenstein and Talman, \{J. R.\} and Pei, \{S. S.\}",

year = "1986",

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doi = "10.1049/el:19860732",

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journal = "Electronics Letters",

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T1 - Direct Electro-Optic Sampling of a Gaas Integrated circuit using a Gain-Switched Ingaasp Injection Laser

AU - Taylor, Antoinette Jane

AU - Tucker, R. S.

AU - Wiesenfeld, J. M.

AU - Burrus, C. A.

AU - Eisenstein, G.

AU - Talman, J. R.

AU - Pei, S. S.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - We demonstrate an electro-optic sampling system based on a gain-switched InGaAsP injection laser. The system has a temporal resolution of 18ps and is used for noninvasive probing of waveforms internal to a GaAs monolithic integrated circuit operating at 2-4 GHz.

AB - We demonstrate an electro-optic sampling system based on a gain-switched InGaAsP injection laser. The system has a temporal resolution of 18ps and is used for noninvasive probing of waveforms internal to a GaAs monolithic integrated circuit operating at 2-4 GHz.

UR - https://www.scopus.com/pages/publications/0022777873

U2 - 10.1049/el:19860732

DO - 10.1049/el:19860732

M3 - Article

SN - 0013-5194

VL - 22

SP - 1068

EP - 1069

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Direct Electro-Optic Sampling of a Gaas Integrated circuit using a Gain-Switched Ingaasp Injection Laser

Abstract

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