Direct growth of crystalline SiGe nanowires on superconducting NbTiN thin films

Xuejing Wang, Sean M. Thomas, J. Kevin Baldwin, Sadhvikas Addamane, Chris Sheehan, Jinkyoung Yoo

Research output: Contribution to journalArticlepeer-review

Abstract

Novel heterostructures created by coupling one-dimensional semiconductor nanowires with a superconducting thin film show great potential toward next-generation quantum computing. Here, by growing high-crystalline SiGe nanowires on a NbTiN thin film, the resulting heterostructure exhibits Ohmic characteristics as well as a shift of the superconducting transition temperature (T c). The structure was characterized at atomic resolution showing a sharp SiGe/NbTiN interface without atomic interdiffusion. Lattice spacing, as calculated from large-area x-ray diffraction experiments, suggests a potential preferred d-spacing matching between (200) NbTiN and (110) SiGe grains. The observed out-of-plane compressive strain within the NbTiN films coupled with SiGe nanowires explains the downward shift of the superconductivity behavior. The presented results post scientific insights toward functional heterostructures by coupling multi-dimensional materials, which could enable tunable superconductivity that benefits the quantum science applications.

Original languageEnglish
Article number155705
JournalNanotechnology
Volume34
Issue number15
DOIs
StatePublished - Apr 9 2023

Fingerprint

Dive into the research topics of 'Direct growth of crystalline SiGe nanowires on superconducting NbTiN thin films'. Together they form a unique fingerprint.

Cite this