Direct observation of ordering in (galn) p

S. Mckernan; B. C. De Cooman; C. B. Carter; D. P. Bour; J. R. Shealy

doi:10.1557/JMR.1988.0406

Direct observation of ordering in (galn) p

S. Mckernan
, B. C. De Cooman
, C. B. Carter
, D. P. Bour
, J. R. Shealy

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Ga xln1-x P epilayers grown under a range of growth conditions by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates have been studied in the electron microscope. The results show the presence of an ordering of the group III sublattice parallel to some of the {111} planes. Dark-field images directly reveal ordered domains of different orientations that appear not to be perfect, but contain many planar defects parallel to the growth surface. © 1988, Materials Research Society. All rights reserved.

Original language	English
Pages (from-to)	406-409
Number of pages	4
Journal	Journal of Materials Research
Volume	3
Issue number	3
DOIs	https://doi.org/10.1557/JMR.1988.0406
State	Published - Jan 1 1988
Externally published	Yes

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10.1557/JMR.1988.0406

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title = "Direct observation of ordering in (galn) p",

abstract = "Ga xln1-x P epilayers grown under a range of growth conditions by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates have been studied in the electron microscope. The results show the presence of an ordering of the group III sublattice parallel to some of the \{111\} planes. Dark-field images directly reveal ordered domains of different orientations that appear not to be perfect, but contain many planar defects parallel to the growth surface. {\textcopyright} 1988, Materials Research Society. All rights reserved.",

author = "S. Mckernan and \{De Cooman\}, \{B. C.\} and Carter, \{C. B.\} and Bour, \{D. P.\} and Shealy, \{J. R.\}",

year = "1988",

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doi = "10.1557/JMR.1988.0406",

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T1 - Direct observation of ordering in (galn) p

AU - Mckernan, S.

AU - De Cooman, B. C.

AU - Carter, C. B.

AU - Bour, D. P.

AU - Shealy, J. R.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - Ga xln1-x P epilayers grown under a range of growth conditions by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates have been studied in the electron microscope. The results show the presence of an ordering of the group III sublattice parallel to some of the {111} planes. Dark-field images directly reveal ordered domains of different orientations that appear not to be perfect, but contain many planar defects parallel to the growth surface. © 1988, Materials Research Society. All rights reserved.

AB - Ga xln1-x P epilayers grown under a range of growth conditions by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates have been studied in the electron microscope. The results show the presence of an ordering of the group III sublattice parallel to some of the {111} planes. Dark-field images directly reveal ordered domains of different orientations that appear not to be perfect, but contain many planar defects parallel to the growth surface. © 1988, Materials Research Society. All rights reserved.

UR - https://www.scopus.com/pages/publications/84959628469

U2 - 10.1557/JMR.1988.0406

DO - 10.1557/JMR.1988.0406

M3 - Article

SN - 0884-2914

VL - 3

SP - 406

EP - 409

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 3

ER -

Direct observation of ordering in (galn) p

Abstract

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