Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon

The influence of dynamic and thermal annealing on hydrogen platelet formation in silicon have been studied. For cryogenic and room temperature implantations, where dynamic annealing is suppressed, hydrogen platelets form upon subsequent thermal annealing on primarily (100) planes. However, under high temperature implantation (dynamic annealing), a high density hydrogen platelet network consisting of both (111) platelets and (100) platelets is observed. Our findings demonstrate that hydrogen implantation under dynamic annealing conditions leads to a modification of the implantation-induced stress, which eventually guide the nucleation and growth of hydrogen-induced platelets.