Dynamics of solid thin-film dewetting in the silicon-on-insulator system

Using low-energy electron microscopy movies, we have measured the dewetting dynamics of single-crystal Si(001) thin films on SiO2 substrates. During annealing (T > 700 °C), voids open in the Si, exposing the oxide. The voids grow, evolving Si fingers that subsequently break apart into selforganized three-dimensional (3D) Si nanocrystals. A kinetic Monte Carlo model incorporating surface and interfacial free energies reproduces all the salient features of the morphological evolution. The dewetting dynamics is described using an analytic surface-diffusion-based model. We demonstrate quantitatively that Si dewetting from SiO2 is mediated by surface-diffusion driven by surface free-energy minimization. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.