Abstract
We investigate early stages of sintering of silicon nitride (Si3N4) nanoclusters by molecular-dynamics (MD) simulations on parallel computers. Within 100 pico seconds, an asymmetric neck is formed between nanocrystals at 2,000K. In the neck region, there are more four-fold than three-fold coordinated Si atoms. In contrast, amorphous nanoclusters develop a symmetric neck, which has nearly the same number of three-fold and four-fold coordinated Si atoms. In the case of sintering among three nanoclusters, a chain-like structure forms in 200 pico seconds. The present study shows that sintering is driven by rapid diffusion of surface atoms and cluster rearrangement.
| Original language | English |
|---|---|
| Pages (from-to) | 181-186 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 408 |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Dec 1 1995 |
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