Effect of electronic stopping on the irradiation-induced changes in hybrid modified silicate thin films

R. Ghisleni; D. A. Lucca; M. Nastasi; L. Shao; Y. Q. Wang; J. Dong; A. Mehner

doi:10.1016/j.nimb.2007.01.061

Effect of electronic stopping on the irradiation-induced changes in hybrid modified silicate thin films

R. Ghisleni
, D. A. Lucca
, M. Nastasi
, L. Shao
, Y. Q. Wang
, J. Dong
, A. Mehner

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Ion beam processing of organic/inorganic thin films can provide an alterative means to heat treatment in converting the films to their final desired mechanical properties. In this study, hybrid sol-gel derived thin films based on TEOS (tetraethylorthosilicate Si(OC₂H₅)₄) and MTES (methyltriethoxysilane CH₃Si(OC₂H₅)₃) were prepared and deposited on Si substrates by spin coating. After the films were allowed to air dry they were heat treated at 300 °C for 10 min. Ion irradiation was carried out at room temperature using 2 MeV Cu²⁺, 115 keV He⁺ and 115 keV H⁺ ions. Ion fluence was varied such that the electronic energy deposited to the film surface region was kept constant for the three different ions. Hardness and H loss in the films were measured after irradiation and were found to depend on the incident ion species. Both hardness and H loss were found to have a linear dependence with ion electronic stopping power.

Original language	English
Pages (from-to)	581-584
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	257
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2007.01.061
State	Published - Apr 1 2007

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Ghisleni, R., Lucca, D. A., Nastasi, M., Shao, L., Wang, Y. Q., Dong, J., & Mehner, A. (2007). Effect of electronic stopping on the irradiation-induced changes in hybrid modified silicate thin films. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 257(1-2 SPEC. ISS.), 581-584. https://doi.org/10.1016/j.nimb.2007.01.061

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title = "Effect of electronic stopping on the irradiation-induced changes in hybrid modified silicate thin films",

abstract = "Ion beam processing of organic/inorganic thin films can provide an alterative means to heat treatment in converting the films to their final desired mechanical properties. In this study, hybrid sol-gel derived thin films based on TEOS (tetraethylorthosilicate Si(OC2H5)4) and MTES (methyltriethoxysilane CH3Si(OC2H5)3) were prepared and deposited on Si substrates by spin coating. After the films were allowed to air dry they were heat treated at 300 °C for 10 min. Ion irradiation was carried out at room temperature using 2 MeV Cu2+, 115 keV He+ and 115 keV H+ ions. Ion fluence was varied such that the electronic energy deposited to the film surface region was kept constant for the three different ions. Hardness and H loss in the films were measured after irradiation and were found to depend on the incident ion species. Both hardness and H loss were found to have a linear dependence with ion electronic stopping power.",

author = "R. Ghisleni and Lucca, \{D. A.\} and M. Nastasi and L. Shao and Wang, \{Y. Q.\} and J. Dong and A. Mehner",

year = "2007",

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Ghisleni, R, Lucca, DA, Nastasi, M, Shao, L, Wang, YQ, Dong, J & Mehner, A 2007, 'Effect of electronic stopping on the irradiation-induced changes in hybrid modified silicate thin films', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 257, no. 1-2 SPEC. ISS., pp. 581-584. https://doi.org/10.1016/j.nimb.2007.01.061

Effect of electronic stopping on the irradiation-induced changes in hybrid modified silicate thin films. / Ghisleni, R.; Lucca, D. A.; Nastasi, M. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, No. 1-2 SPEC. ISS., 01.04.2007, p. 581-584.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of electronic stopping on the irradiation-induced changes in hybrid modified silicate thin films

AU - Ghisleni, R.

AU - Lucca, D. A.

AU - Nastasi, M.

AU - Shao, L.

AU - Wang, Y. Q.

AU - Dong, J.

AU - Mehner, A.

PY - 2007/4/1

Y1 - 2007/4/1

N2 - Ion beam processing of organic/inorganic thin films can provide an alterative means to heat treatment in converting the films to their final desired mechanical properties. In this study, hybrid sol-gel derived thin films based on TEOS (tetraethylorthosilicate Si(OC2H5)4) and MTES (methyltriethoxysilane CH3Si(OC2H5)3) were prepared and deposited on Si substrates by spin coating. After the films were allowed to air dry they were heat treated at 300 °C for 10 min. Ion irradiation was carried out at room temperature using 2 MeV Cu2+, 115 keV He+ and 115 keV H+ ions. Ion fluence was varied such that the electronic energy deposited to the film surface region was kept constant for the three different ions. Hardness and H loss in the films were measured after irradiation and were found to depend on the incident ion species. Both hardness and H loss were found to have a linear dependence with ion electronic stopping power.

AB - Ion beam processing of organic/inorganic thin films can provide an alterative means to heat treatment in converting the films to their final desired mechanical properties. In this study, hybrid sol-gel derived thin films based on TEOS (tetraethylorthosilicate Si(OC2H5)4) and MTES (methyltriethoxysilane CH3Si(OC2H5)3) were prepared and deposited on Si substrates by spin coating. After the films were allowed to air dry they were heat treated at 300 °C for 10 min. Ion irradiation was carried out at room temperature using 2 MeV Cu2+, 115 keV He+ and 115 keV H+ ions. Ion fluence was varied such that the electronic energy deposited to the film surface region was kept constant for the three different ions. Hardness and H loss in the films were measured after irradiation and were found to depend on the incident ion species. Both hardness and H loss were found to have a linear dependence with ion electronic stopping power.

UR - https://www.scopus.com/pages/publications/33947636008

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DO - 10.1016/j.nimb.2007.01.061

M3 - Article

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VL - 257

SP - 581

EP - 584

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

Effect of electronic stopping on the irradiation-induced changes in hybrid modified silicate thin films

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