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Effect of formation temperature and roughness on surface potential of octadecyltrichlorosilane self-assembled monolayer on silicon surfaces

  • Brian G. Bush
  • , Frank W. DelRio
  • , Justin Opatkiewicz
  • , Roya Maboudian
  • , Carlo Carraro

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Kelvin probe force microscopy (KPFM) and atomic force microscopy (AFM) are employed to probe the surface potential and topography of octadecyltrichlorosilane [OTS, CH3(CH2) 17SiCl3] self-assembled monolayers (SAMs) on oxidized Si(100) and polycrystalline silicon surfaces as a function of deposition temperature and substrate roughness with particular attention paid to the monitoring of SAM adsorption on highly rough surfaces. In these studies, it is found that the surface potential magnitude of the adsorbed layer is larger for monolayers formed in the liquid-condensed (LC) phase than for those formed in the liquid-expanded (LE) phase. Experiments on individual islands in the LC phase show that surface potential and monolayer thickness increase with increasing island size; islands larger than about 1.5 μm reach maximum potential and height values of 48 ±4 mV and 2.7 ± 0.1 nm, with respect to the underlying oxidized surface. It is also shown that KPFM is suitable for the study of monolayer adsorption on polycrystalline surfaces, for which preexisting surface texture makes the use of traditional scanning probe techniques for molecular recognition difficult. In these scenarios it is shown that OTS growth occurs preferentially along grain boundaries in fingerlike patterns having a molecular arrangement comparable to that of LC phase islands on atomically smooth silicon. These findings indicate that surface potential measurements provide a highly accurate, local means of probing monolayer morphology on rough surfaces encountered in many applications. © 2007 American Chemical Society.
Original languageEnglish
Pages (from-to)12339-12343
Number of pages5
JournalJournal of Physical Chemistry A
Volume111
Issue number49
DOIs
StatePublished - Dec 13 2007
Externally publishedYes

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