Effect of high H2 pressure on the structural and the electrical properties of MoS2

Hyun Seok Jang; Tae Hyung Kim; Tae Hyun Kim; Jae Sung Lee; Ji Ho Sin; Byung Hoon Kim

doi:10.1007/s40042-021-00181-4

Effect of high H2 pressure on the structural and the electrical properties of MoS2

Hyun Seok Jang
, Tae Hyung Kim
, Tae Hyun Kim
, Jae Sung Lee
, Ji Ho Sin
, Byung Hoon Kim

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This study found that the sulfur vacancy (Vs) of MoS₂ created by high H₂ pressure up to 80 bar affects the structure and the electrical transport property. The charge transport behavior of MoS₂ was obtained from in-situ measurements as the H₂ pressure was increased from vacuum to 80 bar. After exposure to high H₂ pressure, Raman spectroscopy and atomic force microscopy provide information on the structural modulation of MoS₂. The conductance of MoS₂ increased with increasing H₂ pressure and showed irreversibility after the application of a high vacuum (~ 10^–5 Torr) at 343 K. The creation of defects (sulfur vacancies) resulting in a min-gap state can explain the conductance change.

Original language	English
Pages (from-to)	38-43
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	79
Issue number	1
DOIs	https://doi.org/10.1007/s40042-021-00181-4
State	Published - Jul 2021
Externally published	Yes

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title = "Effect of high H2 pressure on the structural and the electrical properties of MoS2",

abstract = "This study found that the sulfur vacancy (Vs) of MoS2 created by high H2 pressure up to 80 bar affects the structure and the electrical transport property. The charge transport behavior of MoS2 was obtained from in-situ measurements as the H2 pressure was increased from vacuum to 80 bar. After exposure to high H2 pressure, Raman spectroscopy and atomic force microscopy provide information on the structural modulation of MoS2. The conductance of MoS2 increased with increasing H2 pressure and showed irreversibility after the application of a high vacuum (\textasciitilde{} 10–5 Torr) at 343 K. The creation of defects (sulfur vacancies) resulting in a min-gap state can explain the conductance change.",

author = "Jang, \{Hyun Seok\} and Kim, \{Tae Hyung\} and Kim, \{Tae Hyun\} and Lee, \{Jae Sung\} and Sin, \{Ji Ho\} and Kim, \{Byung Hoon\}",

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doi = "10.1007/s40042-021-00181-4",

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T1 - Effect of high H2 pressure on the structural and the electrical properties of MoS2

AU - Jang, Hyun Seok

AU - Kim, Tae Hyung

AU - Kim, Tae Hyun

AU - Lee, Jae Sung

AU - Sin, Ji Ho

AU - Kim, Byung Hoon

PY - 2021/7

Y1 - 2021/7

N2 - This study found that the sulfur vacancy (Vs) of MoS2 created by high H2 pressure up to 80 bar affects the structure and the electrical transport property. The charge transport behavior of MoS2 was obtained from in-situ measurements as the H2 pressure was increased from vacuum to 80 bar. After exposure to high H2 pressure, Raman spectroscopy and atomic force microscopy provide information on the structural modulation of MoS2. The conductance of MoS2 increased with increasing H2 pressure and showed irreversibility after the application of a high vacuum (~ 10–5 Torr) at 343 K. The creation of defects (sulfur vacancies) resulting in a min-gap state can explain the conductance change.

AB - This study found that the sulfur vacancy (Vs) of MoS2 created by high H2 pressure up to 80 bar affects the structure and the electrical transport property. The charge transport behavior of MoS2 was obtained from in-situ measurements as the H2 pressure was increased from vacuum to 80 bar. After exposure to high H2 pressure, Raman spectroscopy and atomic force microscopy provide information on the structural modulation of MoS2. The conductance of MoS2 increased with increasing H2 pressure and showed irreversibility after the application of a high vacuum (~ 10–5 Torr) at 343 K. The creation of defects (sulfur vacancies) resulting in a min-gap state can explain the conductance change.

UR - https://www.scopus.com/pages/publications/85105162934

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DO - 10.1007/s40042-021-00181-4

M3 - Article

SN - 0374-4884

VL - 79

SP - 38

EP - 43

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Effect of high H2 pressure on the structural and the electrical properties of MoS2

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