TY - GEN
T1 - Effect of oxygen, grain size, and strain rate on the mechanical behavior of forged P/M tantalum
AU - Michaluk, Christopher A.
AU - Gray, George Thompson
AU - Chatterjee, Tapan
PY - 1993/1/1
Y1 - 1993/1/1
N2 - The effect of oxygen, grain size, and strain rate on the quasistatic and dynamic mechanical properties of extruded, forged, and annealed P/M tantalum containing two different levels of oxygen is addressed. The high oxygen (250-400 ppm) P/M materials were characterized as having a higher flow stress and greater work hardening than wrought high purity tantalum. Work hardening and relative strain rate sensitivity exponents of the P/M materials were found to be relatively independent of oxygen level and grain size and slightly dependent on strain rate. This behavior may be due to the existence of fine dispersion of tantalum oxide particles. The state of oxygen in the P/M forgings was investigated by TEM analysis.
AB - The effect of oxygen, grain size, and strain rate on the quasistatic and dynamic mechanical properties of extruded, forged, and annealed P/M tantalum containing two different levels of oxygen is addressed. The high oxygen (250-400 ppm) P/M materials were characterized as having a higher flow stress and greater work hardening than wrought high purity tantalum. Work hardening and relative strain rate sensitivity exponents of the P/M materials were found to be relatively independent of oxygen level and grain size and slightly dependent on strain rate. This behavior may be due to the existence of fine dispersion of tantalum oxide particles. The state of oxygen in the P/M forgings was investigated by TEM analysis.
UR - https://www.scopus.com/pages/publications/0027313832
M3 - Conference contribution
SN - 1878954318
T3 - P/M in Aerospace, Defense and Demanding Applications - 1993
SP - 195
EP - 204
BT - P/M in Aerospace, Defense and Demanding Applications - 1993
PB - Unknown Publisher
T2 - Proceedings of the 3rd International Conference on Powder Metallurgy in Aerospace, Defense and Demanding Applications
Y2 - 1 January 1993
ER -