Effective out-of-plane g factor in strained-Ge/SiGe quantum dots

Lithographic quantum dots in strained-Ge/SiGe have rapidly progressed from the realization of a single-hole quantum dot to multiqubit devices. We present a measurement of the out-of-plane g factor for a single-hole quantum dot in this material. This experiment avoids the strong orbital effects present in the higher p-like orbitals in this configuration and validates the expected g-factor anisotropy. The results are in good agreement with calculations of the g factor using the heavy- and light-hole spaces of the Luttinger Hamiltonian, showing strong tunability through both the B field and the charge state.