Effects of defect clustering in neutron irradiated silicon

In situations where defects are clustered and the number of defects within a cluster approaches the doping level, shallow defects states may be only partially filled in equilibrium. We have modeled both the equilibrium filling and the kinetic capture dynamics of the silicon divacancy, V2, in neutron damaged silicon. A simple electrostatic model that assumes that V2 defects have the same spatial distribution as a simulation of vacancy defects following neutron irradiation is able to account for the observed capture kinetics. This electrostatic model does not, however, explain the large V2 asymmetry typical of neutron damaged silicon. © 2007 Elsevier B.V. All rights reserved.