Effects of ion irradiation on the structural transformation of sol-gel derived TEOS/MTES thin films

D. A. Lucca; R. Ghisleni; J. K. Lee; Y. Q. Wang; M. Nastasi; J. Dong; A. Mehner

doi:10.1016/j.nimb.2008.03.022

Effects of ion irradiation on the structural transformation of sol-gel derived TEOS/MTES thin films

D. A. Lucca
, R. Ghisleni
, J. K. Lee
, Y. Q. Wang
, M. Nastasi
, J. Dong
, A. Mehner

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Ion beam processing of organic/inorganic thin films has been shown to be an effective means in converting polymeric films into their final ceramic-like state. In this study, hybrid sol-gel derived thin films based on TEOS (tetraethylorthosilicate) Si(OC₂H₅)₄ and MTES (methyltriethoxysilane) CH₃Si(OC₂H₅)₃ were prepared and deposited on Si substrates by spin coating. After the films were allowed to air dry, they were heat treated at 300 °C for 10 min. Ion irradiation was performed at room temperature using 125 keV H⁺ and 250 keV N²⁺ ions with fluences ranging from 1 × 10¹⁴ to 5 × 10¹⁶ ions/cm². FT-IR and Raman spectroscopies were used to quantify the chemical structural transformations which occurred including the evolution of the organic components, the cross-linking of silica clusters, and the clustering of carbon.

Original language	English
Pages (from-to)	2457-2460
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	266
Issue number	10
DOIs	https://doi.org/10.1016/j.nimb.2008.03.022
State	Published - May 1 2008

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title = "Effects of ion irradiation on the structural transformation of sol-gel derived TEOS/MTES thin films",

abstract = "Ion beam processing of organic/inorganic thin films has been shown to be an effective means in converting polymeric films into their final ceramic-like state. In this study, hybrid sol-gel derived thin films based on TEOS (tetraethylorthosilicate) Si(OC2H5)4 and MTES (methyltriethoxysilane) CH3Si(OC2H5)3 were prepared and deposited on Si substrates by spin coating. After the films were allowed to air dry, they were heat treated at 300 °C for 10 min. Ion irradiation was performed at room temperature using 125 keV H+ and 250 keV N2+ ions with fluences ranging from 1 {\texttimes} 1014 to 5 {\texttimes} 1016 ions/cm2. FT-IR and Raman spectroscopies were used to quantify the chemical structural transformations which occurred including the evolution of the organic components, the cross-linking of silica clusters, and the clustering of carbon.",

author = "Lucca, \{D. A.\} and R. Ghisleni and Lee, \{J. K.\} and Wang, \{Y. Q.\} and M. Nastasi and J. Dong and A. Mehner",

year = "2008",

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doi = "10.1016/j.nimb.2008.03.022",

language = "English",

volume = "266",

pages = "2457--2460",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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number = "10",

}

Effects of ion irradiation on the structural transformation of sol-gel derived TEOS/MTES thin films. / Lucca, D. A.; Ghisleni, R.; Lee, J. K. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 266, No. 10, 01.05.2008, p. 2457-2460.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effects of ion irradiation on the structural transformation of sol-gel derived TEOS/MTES thin films

AU - Lucca, D. A.

AU - Ghisleni, R.

AU - Lee, J. K.

AU - Wang, Y. Q.

AU - Nastasi, M.

AU - Dong, J.

AU - Mehner, A.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - Ion beam processing of organic/inorganic thin films has been shown to be an effective means in converting polymeric films into their final ceramic-like state. In this study, hybrid sol-gel derived thin films based on TEOS (tetraethylorthosilicate) Si(OC2H5)4 and MTES (methyltriethoxysilane) CH3Si(OC2H5)3 were prepared and deposited on Si substrates by spin coating. After the films were allowed to air dry, they were heat treated at 300 °C for 10 min. Ion irradiation was performed at room temperature using 125 keV H+ and 250 keV N2+ ions with fluences ranging from 1 × 1014 to 5 × 1016 ions/cm2. FT-IR and Raman spectroscopies were used to quantify the chemical structural transformations which occurred including the evolution of the organic components, the cross-linking of silica clusters, and the clustering of carbon.

AB - Ion beam processing of organic/inorganic thin films has been shown to be an effective means in converting polymeric films into their final ceramic-like state. In this study, hybrid sol-gel derived thin films based on TEOS (tetraethylorthosilicate) Si(OC2H5)4 and MTES (methyltriethoxysilane) CH3Si(OC2H5)3 were prepared and deposited on Si substrates by spin coating. After the films were allowed to air dry, they were heat treated at 300 °C for 10 min. Ion irradiation was performed at room temperature using 125 keV H+ and 250 keV N2+ ions with fluences ranging from 1 × 1014 to 5 × 1016 ions/cm2. FT-IR and Raman spectroscopies were used to quantify the chemical structural transformations which occurred including the evolution of the organic components, the cross-linking of silica clusters, and the clustering of carbon.

UR - https://www.scopus.com/pages/publications/44449152924

U2 - 10.1016/j.nimb.2008.03.022

DO - 10.1016/j.nimb.2008.03.022

M3 - Article

SN - 0168-583X

VL - 266

SP - 2457

EP - 2460

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 10

ER -

Effects of ion irradiation on the structural transformation of sol-gel derived TEOS/MTES thin films

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