Elastic moduli of gallium nitride

R. B. Schwarz; K. Khachaturyan; E. R. Weber

doi:10.1063/1.118503

Elastic moduli of gallium nitride

R. B. Schwarz
, K. Khachaturyan
, E. R. Weber

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

117 Scopus citations

Abstract

The second-order elastic constants of wurtzite phase GaN have been measured with 0.2% accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in units of GPa are: c11=377, c12=160, c13=114, c33=209, and c44=81.4. The elastic moduli are used to calculate the biaxial misfit stresses expected in heteroepitaxial thin films of GaN. © 1997 American Institute of Physics.

Original language	English
Pages (from-to)	1122-1124
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	9
DOIs	https://doi.org/10.1063/1.118503
State	Published - Mar 3 1997

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title = "Elastic moduli of gallium nitride",

abstract = "The second-order elastic constants of wurtzite phase GaN have been measured with 0.2\% accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in units of GPa are: c11=377, c12=160, c13=114, c33=209, and c44=81.4. The elastic moduli are used to calculate the biaxial misfit stresses expected in heteroepitaxial thin films of GaN. {\textcopyright} 1997 American Institute of Physics.",

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AU - Khachaturyan, K.

AU - Weber, E. R.

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N2 - The second-order elastic constants of wurtzite phase GaN have been measured with 0.2% accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in units of GPa are: c11=377, c12=160, c13=114, c33=209, and c44=81.4. The elastic moduli are used to calculate the biaxial misfit stresses expected in heteroepitaxial thin films of GaN. © 1997 American Institute of Physics.

AB - The second-order elastic constants of wurtzite phase GaN have been measured with 0.2% accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in units of GPa are: c11=377, c12=160, c13=114, c33=209, and c44=81.4. The elastic moduli are used to calculate the biaxial misfit stresses expected in heteroepitaxial thin films of GaN. © 1997 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/0001164445

U2 - 10.1063/1.118503

DO - 10.1063/1.118503

M3 - Article

SN - 0003-6951

VL - 70

SP - 1122

EP - 1124

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Elastic moduli of gallium nitride

Abstract

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