Abstract
Density functional calculations show that the electric field effect on Si ad-dimer diffusion on Si(0 0 1) is largely a reflection of the position dependence of the ad-dimer's dipole moment. Surface diffusion barriers' dependence on perpendicular electric fields can be used to discriminate between diffusion mechanisms. Since the previously accepted mechanism for ad-dimer diffusion on Si(0 0 1) has the opposite field dependence to what is observed, it cannot be the one that dominates mass-transport. We identify an alternate process, with a similar barrier at zero electric field and field dependence in agreement with measurements. For rotation, calculations to date show linear field dependence, in contrast to experiments. © 2003 Elsevier Science B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 121-129 |
| Number of pages | 9 |
| Journal | Surface Science |
| Volume | 536 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Jun 20 2003 |
| Externally published | Yes |
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