Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions

Michael Nastasi; George Peterson; Qing Su; Yongqiang Wang; N. J. Ianno; Nicole Benker; Elena Echeverría; Andrew J. Yost; J. A. Kelber; Bin Dong; Peter A. Dowben

doi:10.1016/j.nimb.2018.07.006

Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions

Michael Nastasi
, George Peterson
, Qing Su
, Yongqiang Wang
, N. J. Ianno
, Nicole Benker
, Elena Echeverría
, Andrew J. Yost
, J. A. Kelber
, Bin Dong
, Peter A. Dowben

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The electrical and structural properties of amorphous hydrogenated semiconducting boron carbide on silicon p-n heterojunction diodes have been examined following irradiation with thermal neutrons to a maximum dose of 1.08 × 10⁹ neutrons/cm². Improvements in the current-voltage response of the heterojunction diode, along with a decrease in the diode ideality factor, are observed with neutron exposure. Capacitance-voltage data were used to extract the hydrogenated boron carbide carrier density and diode built-in potential, both of which decrease with irradiation. Structural and defect characterization, carried out with high resolution TEM and RBS in channeling mode, show that the hydrogenated boron carbide remains amorphous and no discernible damage occurs in the Si component of the diode. These data suggest that the observed changes in electrical properties result from irradiation induced defect passivation in the amorphous boron carbide. For n-type plasma enhanced chemical vapor deposition hydrogenated semiconducting boron carbide on p-type silicon, the improvements in the heterojunction diode are quite dramatic.

Original language	English
Pages (from-to)	48-54
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	432
DOIs	https://doi.org/10.1016/j.nimb.2018.07.006
State	Published - Oct 1 2018

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10.1016/j.nimb.2018.07.006

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Nastasi, M., Peterson, G., Su, Q., Wang, Y., Ianno, N. J., Benker, N., Echeverría, E., Yost, A. J., Kelber, J. A., Dong, B., & Dowben, P. A. (2018). Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 432, 48-54. https://doi.org/10.1016/j.nimb.2018.07.006

@article{fa636f92737e4c0194b266616c3d2423,

title = "Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions",

abstract = "The electrical and structural properties of amorphous hydrogenated semiconducting boron carbide on silicon p-n heterojunction diodes have been examined following irradiation with thermal neutrons to a maximum dose of 1.08 {\texttimes} 109 neutrons/cm2. Improvements in the current-voltage response of the heterojunction diode, along with a decrease in the diode ideality factor, are observed with neutron exposure. Capacitance-voltage data were used to extract the hydrogenated boron carbide carrier density and diode built-in potential, both of which decrease with irradiation. Structural and defect characterization, carried out with high resolution TEM and RBS in channeling mode, show that the hydrogenated boron carbide remains amorphous and no discernible damage occurs in the Si component of the diode. These data suggest that the observed changes in electrical properties result from irradiation induced defect passivation in the amorphous boron carbide. For n-type plasma enhanced chemical vapor deposition hydrogenated semiconducting boron carbide on p-type silicon, the improvements in the heterojunction diode are quite dramatic.",

author = "Michael Nastasi and George Peterson and Qing Su and Yongqiang Wang and Ianno, \{N. J.\} and Nicole Benker and Elena Echeverr{\'i}a and Yost, \{Andrew J.\} and Kelber, \{J. A.\} and Bin Dong and Dowben, \{Peter A.\}",

year = "2018",

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doi = "10.1016/j.nimb.2018.07.006",

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Nastasi, M, Peterson, G, Su, Q, Wang, Y, Ianno, NJ, Benker, N, Echeverría, E, Yost, AJ, Kelber, JA, Dong, B & Dowben, PA 2018, 'Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 432, pp. 48-54. https://doi.org/10.1016/j.nimb.2018.07.006

Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions. / Nastasi, Michael; Peterson, George; Su, Qing et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 432, 01.10.2018, p. 48-54.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions

AU - Nastasi, Michael

AU - Peterson, George

AU - Su, Qing

AU - Wang, Yongqiang

AU - Ianno, N. J.

AU - Benker, Nicole

AU - Echeverría, Elena

AU - Yost, Andrew J.

AU - Kelber, J. A.

AU - Dong, Bin

AU - Dowben, Peter A.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - The electrical and structural properties of amorphous hydrogenated semiconducting boron carbide on silicon p-n heterojunction diodes have been examined following irradiation with thermal neutrons to a maximum dose of 1.08 × 109 neutrons/cm2. Improvements in the current-voltage response of the heterojunction diode, along with a decrease in the diode ideality factor, are observed with neutron exposure. Capacitance-voltage data were used to extract the hydrogenated boron carbide carrier density and diode built-in potential, both of which decrease with irradiation. Structural and defect characterization, carried out with high resolution TEM and RBS in channeling mode, show that the hydrogenated boron carbide remains amorphous and no discernible damage occurs in the Si component of the diode. These data suggest that the observed changes in electrical properties result from irradiation induced defect passivation in the amorphous boron carbide. For n-type plasma enhanced chemical vapor deposition hydrogenated semiconducting boron carbide on p-type silicon, the improvements in the heterojunction diode are quite dramatic.

AB - The electrical and structural properties of amorphous hydrogenated semiconducting boron carbide on silicon p-n heterojunction diodes have been examined following irradiation with thermal neutrons to a maximum dose of 1.08 × 109 neutrons/cm2. Improvements in the current-voltage response of the heterojunction diode, along with a decrease in the diode ideality factor, are observed with neutron exposure. Capacitance-voltage data were used to extract the hydrogenated boron carbide carrier density and diode built-in potential, both of which decrease with irradiation. Structural and defect characterization, carried out with high resolution TEM and RBS in channeling mode, show that the hydrogenated boron carbide remains amorphous and no discernible damage occurs in the Si component of the diode. These data suggest that the observed changes in electrical properties result from irradiation induced defect passivation in the amorphous boron carbide. For n-type plasma enhanced chemical vapor deposition hydrogenated semiconducting boron carbide on p-type silicon, the improvements in the heterojunction diode are quite dramatic.

UR - https://www.scopus.com/pages/publications/85050255628

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M3 - Article

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Electrical and structural characterization of neutron irradiated amorphous boron carbide/silicon p-n heterojunctions

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