Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation

Lynn B. Bridwell; R. E. Giedd; Yongqiang Wang; S. S. Mohite; Tamera Jahnke; I. M. Brown

doi:10.1016/0168-583X(91)95802-K

Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation

Lynn B. Bridwell
, R. E. Giedd
, Yongqiang Wang
, S. S. Mohite
, Tamera Jahnke
, I. M. Brown

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 10¹⁶-10¹⁷ ions/cm². Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As.

Original language	English
Pages (from-to)	1240-1244
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	59-60
Issue number	PART 2
DOIs	https://doi.org/10.1016/0168-583X(91)95802-K
State	Published - Jul 1 1991
Externally published	Yes

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10.1016/0168-583X(91)95802-K

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title = "Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation",

abstract = "Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 1016-1017 ions/cm2. Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As.",

author = "Bridwell, \{Lynn B.\} and Giedd, \{R. E.\} and Yongqiang Wang and Mohite, \{S. S.\} and Tamera Jahnke and Brown, \{I. M.\}",

year = "1991",

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doi = "10.1016/0168-583X(91)95802-K",

language = "English",

volume = "59-60",

pages = "1240--1244",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "PART 2",

}

Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation. / Bridwell, Lynn B.; Giedd, R. E.; Wang, Yongqiang et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 59-60, No. PART 2, 01.07.1991, p. 1240-1244.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation

AU - Bridwell, Lynn B.

AU - Giedd, R. E.

AU - Wang, Yongqiang

AU - Mohite, S. S.

AU - Jahnke, Tamera

AU - Brown, I. M.

PY - 1991/7/1

Y1 - 1991/7/1

N2 - Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 1016-1017 ions/cm2. Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As.

AB - Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 1016-1017 ions/cm2. Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As.

UR - https://www.scopus.com/pages/publications/0001641386

U2 - 10.1016/0168-583X(91)95802-K

DO - 10.1016/0168-583X(91)95802-K

M3 - Article

SN - 0168-583X

VL - 59-60

SP - 1240

EP - 1244

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - PART 2

ER -

Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation

Abstract

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