Electrically bistable nonvolatile switching devices fabricated with a high performance polyimide bearing diphenylcarbamyl moieties

In this study, novel nonvolatile memory devices, based on a high performance polyimide, poly(3,3′-bis(diphenylcarbamyloxy)-4,4′- biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-DPC PI), were fabricated with a simple conventional solution coating process. The devices were found to exhibit programmable, rewritable nonvolatile memory characteristics with a high ON/OFF current ratio of up to 10⁹, a long retention time in both ON and OFF states, and low power consumption. Moreover, the active 6F-HAB-DPC PI layer is thermally and dimensionally stable and thus hybridization with a complementary metal-oxide-semiconductor platform is feasible. The advantageous properties and ease of fabrication of the 6F-HAB-DPC PI based devices open up the possibility of the mass production of high performance digital nonvolatile polymer memory devices at low cost.