Abstract
We present an electrically modulated nonlinear metamaterial at terahertz frequencies. The device consists of a planar array of split-ring resonators (SRRs) fabricated on n-type GaAs. Increasing the incident THz field strength induces carriers in the GaAs substrate, shorting the SRR capacitive gap and modulating the MM resonance. The application of a 15V bias to the MM reduces the net field modulation by ~60%.
| Original language | English |
|---|---|
| Title of host publication | Optics InfoBase Conference Papers |
| Volume | Part F41-CLEO_SI 2017 |
| DOIs | |
| State | Published - Jan 1 2017 |
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