Electro-optic sampling measurements of high-speed InP integrated circuits

J. M. Wiesenfeld; R. S. Tucker; A. Antreasyan; C. A. Burrus; Antoinette Jane Taylor; V. D. Mattera; P. A. Garbinski

doi:10.1063/1.97891

Electro-optic sampling measurements of high-speed InP integrated circuits

J. M. Wiesenfeld
, R. S. Tucker
, A. Antreasyan
, C. A. Burrus
, Antoinette Jane Taylor
, V. D. Mattera
, P. A. Garbinski

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Multigigahertz waveforms in an InGaAs/InP metal-insulator-semiconductor field-effect transistor inverter circuit have been measured noninvasively using the electro-optic sampling technique with pulses from a gain-switched InGaAsP laser. Propagation delays as low as 15 ps in a single inverter stage have been measured.

Original language	English
Pages (from-to)	1310-1312
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	19
DOIs	https://doi.org/10.1063/1.97891
State	Published - Dec 1 1987
Externally published	Yes

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title = "Electro-optic sampling measurements of high-speed InP integrated circuits",

abstract = "Multigigahertz waveforms in an InGaAs/InP metal-insulator-semiconductor field-effect transistor inverter circuit have been measured noninvasively using the electro-optic sampling technique with pulses from a gain-switched InGaAsP laser. Propagation delays as low as 15 ps in a single inverter stage have been measured.",

author = "Wiesenfeld, \{J. M.\} and Tucker, \{R. S.\} and A. Antreasyan and Burrus, \{C. A.\} and Taylor, \{Antoinette Jane\} and Mattera, \{V. D.\} and Garbinski, \{P. A.\}",

year = "1987",

month = dec,

day = "1",

doi = "10.1063/1.97891",

language = "English",

volume = "50",

pages = "1310--1312",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Electro-optic sampling measurements of high-speed InP integrated circuits

AU - Wiesenfeld, J. M.

AU - Tucker, R. S.

AU - Antreasyan, A.

AU - Burrus, C. A.

AU - Taylor, Antoinette Jane

AU - Mattera, V. D.

AU - Garbinski, P. A.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - Multigigahertz waveforms in an InGaAs/InP metal-insulator-semiconductor field-effect transistor inverter circuit have been measured noninvasively using the electro-optic sampling technique with pulses from a gain-switched InGaAsP laser. Propagation delays as low as 15 ps in a single inverter stage have been measured.

AB - Multigigahertz waveforms in an InGaAs/InP metal-insulator-semiconductor field-effect transistor inverter circuit have been measured noninvasively using the electro-optic sampling technique with pulses from a gain-switched InGaAsP laser. Propagation delays as low as 15 ps in a single inverter stage have been measured.

UR - https://www.scopus.com/pages/publications/0001537398

U2 - 10.1063/1.97891

DO - 10.1063/1.97891

M3 - Article

SN - 0003-6951

VL - 50

SP - 1310

EP - 1312

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Electro-optic sampling measurements of high-speed InP integrated circuits

Abstract

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