ELECTRO-OPTIC SAMPLING OF HIGH-SPEED, InP-BASED INTEGRATED CIRCUITS.

J. M. Wiesenfeld; R. S. Tucker; A. Antreasyan; C. A. Burrus; Antoinette Jane Taylor

ELECTRO-OPTIC SAMPLING OF HIGH-SPEED, InP-BASED INTEGRATED CIRCUITS.

J. M. Wiesenfeld
, R. S. Tucker
, A. Antreasyan
, C. A. Burrus
, Antoinette Jane Taylor

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

The application of electrooptic sampling to measurements of waveforms internal to a high-speed InP integrated circuit is reported. Waveforms and propagation delays through a two-state InGaAs/InP metal-insulator-semiconductor FET (MISFET) inverter circuit have been measured. The observed propagation delay through an individual FET is 21 plus or minus 7 ps. The measurement uses an electrooptic sampling system based on a 1. 3- mu m InGaAsP injection laser that is gain-switched. The authors extends previously developed techniques for noninvasive sampling using the electrooptic effect in GaAs to InP-based circuits.

Original language	English
Title of host publication	Unknown Host Publication Title
Publisher	Unknown Publisher
Pages	12-14
Number of pages	3
ISBN (Print)	0936659165
State	Published - Jan 1 1987
Externally published	Yes
Event	Topical Meeting on Picosecond Electronics and Optoelectronics: Summaries of Papers, Conference Edition. - Duration: Jan 1 1987 → …

Conference

Conference	Topical Meeting on Picosecond Electronics and Optoelectronics: Summaries of Papers, Conference Edition.
Period	01/1/87 → …

Cite this

@inproceedings{ffca85e13e4740c4abe3d14e84fc7613,

title = "ELECTRO-OPTIC SAMPLING OF HIGH-SPEED, InP-BASED INTEGRATED CIRCUITS.",

abstract = "The application of electrooptic sampling to measurements of waveforms internal to a high-speed InP integrated circuit is reported. Waveforms and propagation delays through a two-state InGaAs/InP metal-insulator-semiconductor FET (MISFET) inverter circuit have been measured. The observed propagation delay through an individual FET is 21 plus or minus 7 ps. The measurement uses an electrooptic sampling system based on a 1. 3- mu m InGaAsP injection laser that is gain-switched. The authors extends previously developed techniques for noninvasive sampling using the electrooptic effect in GaAs to InP-based circuits.",

author = "Wiesenfeld, \{J. M.\} and Tucker, \{R. S.\} and A. Antreasyan and Burrus, \{C. A.\} and Taylor, \{Antoinette Jane\}",

year = "1987",

month = jan,

day = "1",

language = "English",

isbn = "0936659165",

pages = "12--14",

booktitle = "Unknown Host Publication Title",

publisher = "Unknown Publisher",

note = "Topical Meeting on Picosecond Electronics and Optoelectronics: Summaries of Papers, Conference Edition. ; Conference date: 01-01-1987",

}

TY - GEN

T1 - ELECTRO-OPTIC SAMPLING OF HIGH-SPEED, InP-BASED INTEGRATED CIRCUITS.

AU - Wiesenfeld, J. M.

AU - Tucker, R. S.

AU - Antreasyan, A.

AU - Burrus, C. A.

AU - Taylor, Antoinette Jane

PY - 1987/1/1

Y1 - 1987/1/1

N2 - The application of electrooptic sampling to measurements of waveforms internal to a high-speed InP integrated circuit is reported. Waveforms and propagation delays through a two-state InGaAs/InP metal-insulator-semiconductor FET (MISFET) inverter circuit have been measured. The observed propagation delay through an individual FET is 21 plus or minus 7 ps. The measurement uses an electrooptic sampling system based on a 1. 3- mu m InGaAsP injection laser that is gain-switched. The authors extends previously developed techniques for noninvasive sampling using the electrooptic effect in GaAs to InP-based circuits.

AB - The application of electrooptic sampling to measurements of waveforms internal to a high-speed InP integrated circuit is reported. Waveforms and propagation delays through a two-state InGaAs/InP metal-insulator-semiconductor FET (MISFET) inverter circuit have been measured. The observed propagation delay through an individual FET is 21 plus or minus 7 ps. The measurement uses an electrooptic sampling system based on a 1. 3- mu m InGaAsP injection laser that is gain-switched. The authors extends previously developed techniques for noninvasive sampling using the electrooptic effect in GaAs to InP-based circuits.

UR - https://www.scopus.com/pages/publications/0023248026

M3 - Conference contribution

SN - 0936659165

SP - 12

EP - 14

BT - Unknown Host Publication Title

PB - Unknown Publisher

T2 - Topical Meeting on Picosecond Electronics and Optoelectronics: Summaries of Papers, Conference Edition.

Y2 - 1 January 1987

ER -

ELECTRO-OPTIC SAMPLING OF HIGH-SPEED, InP-BASED INTEGRATED CIRCUITS.

Abstract

Conference

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