Electron spin lifetime of a single antimony donor in silicon

L. A. Tracy; T. M. Lu; N. C. Bishop; G. A. Ten Eyck; T. Pluym; J. R. Wendt; M. P. Lilly; M. S. Carroll

doi:10.1063/1.4824128

Electron spin lifetime of a single antimony donor in silicon

L. A. Tracy
, T. M. Lu
, N. C. Bishop
, G. A. Ten Eyck
, T. Pluym
, J. R. Wendt
, M. P. Lilly
, M. S. Carroll

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We present measurements of the electron spin lifetime (T1) of a single Sb donor in Si. For a magnetic field (B) oriented along the [100] Si crystal direction and low temperature (T) such that k T g μ B, we find T 1-1 K B 5, where K 1.7 × 10-3 Hz T - 5. The T 1-1 B 5 dependence is expected for donor electron spin relaxation due to g-factor dependence on crystal strain. The magnitude of T1 is within a factor of two of theoretical estimates and is in close agreement with values obtained for bulk donor ensembles. © 2013 AIP Publishing LLC.

Original language	English
Journal	Applied Physics Letters
Volume	103
Issue number	14
DOIs	https://doi.org/10.1063/1.4824128
State	Published - Sep 30 2013
Externally published	Yes

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@article{08ab53e10df541a19944be5de4f9c111,

title = "Electron spin lifetime of a single antimony donor in silicon",

abstract = "We present measurements of the electron spin lifetime (T1) of a single Sb donor in Si. For a magnetic field (B) oriented along the [100] Si crystal direction and low temperature (T) such that k T g μ B, we find T 1-1 K B 5, where K 1.7 × 10-3 Hz T - 5. The T 1-1 B 5 dependence is expected for donor electron spin relaxation due to g-factor dependence on crystal strain. The magnitude of T1 is within a factor of two of theoretical estimates and is in close agreement with values obtained for bulk donor ensembles. {\textcopyright} 2013 AIP Publishing LLC.",

author = "Tracy, \{L. A.\} and Lu, \{T. M.\} and Bishop, \{N. C.\} and \{Ten Eyck\}, \{G. A.\} and T. Pluym and Wendt, \{J. R.\} and Lilly, \{M. P.\} and Carroll, \{M. S.\}",

year = "2013",

month = sep,

day = "30",

doi = "10.1063/1.4824128",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Electron spin lifetime of a single antimony donor in silicon

AU - Tracy, L. A.

AU - Lu, T. M.

AU - Bishop, N. C.

AU - Ten Eyck, G. A.

AU - Pluym, T.

AU - Wendt, J. R.

AU - Lilly, M. P.

AU - Carroll, M. S.

PY - 2013/9/30

Y1 - 2013/9/30

N2 - We present measurements of the electron spin lifetime (T1) of a single Sb donor in Si. For a magnetic field (B) oriented along the [100] Si crystal direction and low temperature (T) such that k T g μ B, we find T 1-1 K B 5, where K 1.7 × 10-3 Hz T - 5. The T 1-1 B 5 dependence is expected for donor electron spin relaxation due to g-factor dependence on crystal strain. The magnitude of T1 is within a factor of two of theoretical estimates and is in close agreement with values obtained for bulk donor ensembles. © 2013 AIP Publishing LLC.

AB - We present measurements of the electron spin lifetime (T1) of a single Sb donor in Si. For a magnetic field (B) oriented along the [100] Si crystal direction and low temperature (T) such that k T g μ B, we find T 1-1 K B 5, where K 1.7 × 10-3 Hz T - 5. The T 1-1 B 5 dependence is expected for donor electron spin relaxation due to g-factor dependence on crystal strain. The magnitude of T1 is within a factor of two of theoretical estimates and is in close agreement with values obtained for bulk donor ensembles. © 2013 AIP Publishing LLC.

UR - https://www.scopus.com/pages/publications/84885660343

U2 - 10.1063/1.4824128

DO - 10.1063/1.4824128

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Electron spin lifetime of a single antimony donor in silicon

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