Electronic properties of ion-implanted polymer films

Yongqiang Wang; R. E. Giedd; M. G. Moss; J. Kaufmann

doi:10.1016/S0168-583X(96)01162-7

Electronic properties of ion-implanted polymer films

Yongqiang Wang
, R. E. Giedd
, M. G. Moss
, J. Kaufmann

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Electronic properties of polystyrene-acrylonitrile (PSA) films, implanted with 20-175-keV nitrogen to a dose range of 5 × 10¹³ -5 × 10¹⁶ ions/cm², were studied. Electrical conductivity of the films increases more than 17 orders of magnitude with increasing ion dose and beam energy. Temperature dependence of the conductivity suggests a composite hopping conduction in the films. Temperature dependence of piezoresistance shows that the variable-range hopping conduction is also responsible for piezoresistivity in the films. Hall coefficient measurements show no hall voltage with the experimental limit of ∼ 1 μV, indicating that a large number of carriers (> 10²² cm^-3) are present in the implanted films. Optical absorption indicates a progressive optical gap closing as ion dose increases, suggesting a gradual phase transition from insulator to semiconductor. Graphitic properties were observed in the PSA film implanted with 175-keV N⁺₂ ions to a dose of 5 × 10¹⁶ ions/cm².

Original language	English
Pages (from-to)	710-715
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	127-128
DOIs	https://doi.org/10.1016/S0168-583X(96)01162-7
State	Published - Jan 1 1997
Externally published	Yes

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title = "Electronic properties of ion-implanted polymer films",

abstract = "Electronic properties of polystyrene-acrylonitrile (PSA) films, implanted with 20-175-keV nitrogen to a dose range of 5 × 1013 -5 × 1016 ions/cm2, were studied. Electrical conductivity of the films increases more than 17 orders of magnitude with increasing ion dose and beam energy. Temperature dependence of the conductivity suggests a composite hopping conduction in the films. Temperature dependence of piezoresistance shows that the variable-range hopping conduction is also responsible for piezoresistivity in the films. Hall coefficient measurements show no hall voltage with the experimental limit of ∼ 1 μV, indicating that a large number of carriers (> 1022 cm-3) are present in the implanted films. Optical absorption indicates a progressive optical gap closing as ion dose increases, suggesting a gradual phase transition from insulator to semiconductor. Graphitic properties were observed in the PSA film implanted with 175-keV N+2 ions to a dose of 5 × 1016 ions/cm2.",

author = "Yongqiang Wang and Giedd, \{R. E.\} and Moss, \{M. G.\} and J. Kaufmann",

year = "1997",

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doi = "10.1016/S0168-583X(96)01162-7",

language = "English",

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TY - JOUR

T1 - Electronic properties of ion-implanted polymer films

AU - Wang, Yongqiang

AU - Giedd, R. E.

AU - Moss, M. G.

AU - Kaufmann, J.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Electronic properties of polystyrene-acrylonitrile (PSA) films, implanted with 20-175-keV nitrogen to a dose range of 5 × 1013 -5 × 1016 ions/cm2, were studied. Electrical conductivity of the films increases more than 17 orders of magnitude with increasing ion dose and beam energy. Temperature dependence of the conductivity suggests a composite hopping conduction in the films. Temperature dependence of piezoresistance shows that the variable-range hopping conduction is also responsible for piezoresistivity in the films. Hall coefficient measurements show no hall voltage with the experimental limit of ∼ 1 μV, indicating that a large number of carriers (> 1022 cm-3) are present in the implanted films. Optical absorption indicates a progressive optical gap closing as ion dose increases, suggesting a gradual phase transition from insulator to semiconductor. Graphitic properties were observed in the PSA film implanted with 175-keV N+2 ions to a dose of 5 × 1016 ions/cm2.

AB - Electronic properties of polystyrene-acrylonitrile (PSA) films, implanted with 20-175-keV nitrogen to a dose range of 5 × 1013 -5 × 1016 ions/cm2, were studied. Electrical conductivity of the films increases more than 17 orders of magnitude with increasing ion dose and beam energy. Temperature dependence of the conductivity suggests a composite hopping conduction in the films. Temperature dependence of piezoresistance shows that the variable-range hopping conduction is also responsible for piezoresistivity in the films. Hall coefficient measurements show no hall voltage with the experimental limit of ∼ 1 μV, indicating that a large number of carriers (> 1022 cm-3) are present in the implanted films. Optical absorption indicates a progressive optical gap closing as ion dose increases, suggesting a gradual phase transition from insulator to semiconductor. Graphitic properties were observed in the PSA film implanted with 175-keV N+2 ions to a dose of 5 × 1016 ions/cm2.

UR - https://www.scopus.com/pages/publications/0031547941

U2 - 10.1016/S0168-583X(96)01162-7

DO - 10.1016/S0168-583X(96)01162-7

M3 - Article

SN - 0168-583X

VL - 127-128

SP - 710

EP - 715

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Electronic properties of ion-implanted polymer films

Abstract

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