Electronic properties of Si-doped n-doping-intrinsic-p-doping-intrinic (nipi) structures in GaAs

C. Y. Fong; R. F. Gallup; J. S. Nelson

Electronic properties of Si-doped n-doping-intrinsic-p-doping-intrinic (nipi) structures in GaAs

C. Y. Fong
, R. F. Gallup
, J. S. Nelson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The electronic properties of heavily and orderly Si-doped nipi structures in GaAs are studied theoretically using the abinitio self-consistent pseudopotential method within the local density approximation. Two nipi configurations are considered. Besides investigating the nature of the impurity-related band edge states, the xy-planar-averaged local ionic and self-consistent potentials are also analyzed. The screening effect of the host crystal on the doping induced potential is small. The effects of the doping induced electric field and strain due to doping are also examined.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	479-488
Number of pages	10
Volume	1361
Edition	pt 1
State	Published - Jan 1 1991
Externally published	Yes

Cite this

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title = "Electronic properties of Si-doped n-doping-intrinsic-p-doping-intrinic (nipi) structures in GaAs",

abstract = "The electronic properties of heavily and orderly Si-doped nipi structures in GaAs are studied theoretically using the abinitio self-consistent pseudopotential method within the local density approximation. Two nipi configurations are considered. Besides investigating the nature of the impurity-related band edge states, the xy-planar-averaged local ionic and self-consistent potentials are also analyzed. The screening effect of the host crystal on the doping induced potential is small. The effects of the doping induced electric field and strain due to doping are also examined.",

author = "Fong, \{C. Y.\} and Gallup, \{R. F.\} and Nelson, \{J. S.\}",

year = "1991",

month = jan,

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language = "English",

volume = "1361",

pages = "479--488",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Electronic properties of Si-doped n-doping-intrinsic-p-doping-intrinic (nipi) structures in GaAs

AU - Fong, C. Y.

AU - Gallup, R. F.

AU - Nelson, J. S.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The electronic properties of heavily and orderly Si-doped nipi structures in GaAs are studied theoretically using the abinitio self-consistent pseudopotential method within the local density approximation. Two nipi configurations are considered. Besides investigating the nature of the impurity-related band edge states, the xy-planar-averaged local ionic and self-consistent potentials are also analyzed. The screening effect of the host crystal on the doping induced potential is small. The effects of the doping induced electric field and strain due to doping are also examined.

AB - The electronic properties of heavily and orderly Si-doped nipi structures in GaAs are studied theoretically using the abinitio self-consistent pseudopotential method within the local density approximation. Two nipi configurations are considered. Besides investigating the nature of the impurity-related band edge states, the xy-planar-averaged local ionic and self-consistent potentials are also analyzed. The screening effect of the host crystal on the doping induced potential is small. The effects of the doping induced electric field and strain due to doping are also examined.

UR - https://www.scopus.com/pages/publications/0025807283

M3 - Conference contribution

VL - 1361

SP - 479

EP - 488

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Electronic properties of Si-doped n-doping-intrinsic-p-doping-intrinic (nipi) structures in GaAs

Abstract

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