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Emergence of a reentrant insulating phase around ν = frac(1, 3) in a series of GaAs/AlGaAs quantum wells with varying well widths

  • D. R. Luhman
  • , W. Li
  • , T. M. Lu
  • , D. C. Tsui
  • , L. N. Pfeiffer
  • , K. W. West

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on magneto-transport measurements of a systematic set of five GaAs/AlGaAs quantum wells with well widths ranging from 7.9 to 33.0 nm. We find that as L is decreased into the regime where the zero-field mobility is limited due to surface roughness, a reentrant insulating phase around filling fraction ν = frac(1, 3) emerges. As L is decreased further, only a single insulating phase is observed for ν < 1. © 2007 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1504-1506
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
StatePublished - Mar 1 2008
Externally publishedYes

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