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Enhanced Electron Correlation and Significantly Suppressed Thermal Conductivity in Dirac Nodal-Line Metal Nanowires by Chemical Doping

  • Amanda L. Coughlin
  • , Zhiliang Pan
  • , Jeonghoon Hong
  • , Tongxie Zhang
  • , Xun Zhan
  • , Wenqian Wu
  • , Dongyue Xie
  • , Tian Tong
  • , Thomas Ruch
  • , Jean J. Heremans
  • , Jiming Bao
  • , Herbert A. Fertig
  • , Jian Wang
  • , Jeongwoo Kim
  • , Hanyu Zhu
  • , Deyu Li
  • , Shixiong Zhang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Enhancing electron correlation in a weakly interacting topological system has great potential to promote correlated topological states of matter with extraordinary quantum properties. Here, the enhancement of electron correlation in a prototypical topological metal, namely iridium dioxide (IrO2), via doping with 3d transition metal vanadium is demonstrated. Single-crystalline vanadium-doped IrO2 nanowires are synthesized through chemical vapor deposition where the nanowire yield and morphology are improved by creating rough surfaces on substrates. Vanadium doping leads to a dramatic decrease in Raman intensity without notable peak broadening, signifying the enhancement of electron correlation. The enhanced electron correlation is further evidenced by transport studies where the electrical resistivity is greatly increased and follows an unusual (Formula presented.) dependence on the temperature (T). The lattice thermal conductivity is suppressed by an order of magnitude via doping even at room temperature where phonon-impurity scattering becomes less important. Density functional theory calculations suggest that the remarkable reduction of thermal conductivity arises from the complex phonon dispersion and reduced energy gap between phonon branches, which greatly enhances phase space for phonon–phonon Umklapp scattering. This work demonstrates a unique system combining 3d and 5d transition metals in isostructural materials to enrich the system with various types of interactions.
Original languageEnglish
Article number2204424
JournalAdvanced Science
Volume10
Issue number2
DOIs
StatePublished - Jan 13 2023

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