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Enhanced ion irradiation tolerance properties in TiN/MgO nanolayer films

  • L. Jiao
  • , A. Chen
  • , M. T. Myers
  • , M. J. General
  • , L. Shao
  • , X. Zhang
  • , H. Wang

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Interface mitigation effects on ion irradiation induced damage are explored in TiN/MgO nanolayer thin films with nanolayer thickness varied from 10 nm to 50 nm. After ion irradiation with He ions to a fluence of 4 × 10 16 cm-2 at 50 keV, no hardness variation is observed in the nanolayer samples based on the nano-indentation measurement, and high resolution TEM indicates no obvious ion damage in the MgO layers in the nanolayered samples. However, single layer MgO film shows a significant hardness increase of ∼20% and high density point defect clusters (∼5 nm) are clearly identified. These results suggest that, in this system, nanolayer interfaces could act as effective point defect sinks and be responsible for the enhanced radiation tolerance properties.

Original languageEnglish
Pages (from-to)217-222
Number of pages6
JournalJournal of Nuclear Materials
Volume434
Issue number1-3
DOIs
StatePublished - Jan 7 2013
Externally publishedYes

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