Enhanced radiation tolerance in nanocrystalline Mg Ga2 O4

Tong D. Shen; Shihai Feng; Ming Tang; James A. Valdez; Yongqiang Wang; Kurt E. Sickafus

doi:10.1063/1.2753098

Enhanced radiation tolerance in nanocrystalline Mg Ga2 O4

Tong D. Shen
, Shihai Feng
, Ming Tang
, James A. Valdez
, Yongqiang Wang
, Kurt E. Sickafus

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

294 Scopus citations

Abstract

The authors demonstrate a substantial enhancement in radiation-induced amorphization resistance for single-phased nanocrystalline (NC) versus large-grained polycrystalline Mg Ga2 O4. NC and large-grained Mg Ga2 O4 were irradiated at ∼100 K with 300 keV Kr++ ions to fluences ranging between 5× 1019 and 4× 1020 Kr m2. Large-grained Mg Ga2 O4 samples began to amorphize by a fluence of 5× 1019 Kr m2, while NC Mg Ga2 O4 remained crystalline with no evidence for structural changes (other than moderate grain growth in the lowermost implanted region), to a fluence of 4× 1020 Kr m2. To our knowledge, this is the first experimental study to reveal enhanced amorphization resistance in an irradiated, single-phase, NC material.

Original language	English
Article number	263115
Journal	Applied Physics Letters
Volume	90
Issue number	26
DOIs	https://doi.org/10.1063/1.2753098
State	Published - Aug 2 2007

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title = "Enhanced radiation tolerance in nanocrystalline Mg Ga2 O4",

abstract = "The authors demonstrate a substantial enhancement in radiation-induced amorphization resistance for single-phased nanocrystalline (NC) versus large-grained polycrystalline Mg Ga2 O4. NC and large-grained Mg Ga2 O4 were irradiated at ∼100 K with 300 keV Kr++ ions to fluences ranging between 5{\texttimes} 1019 and 4{\texttimes} 1020 Kr m2. Large-grained Mg Ga2 O4 samples began to amorphize by a fluence of 5{\texttimes} 1019 Kr m2, while NC Mg Ga2 O4 remained crystalline with no evidence for structural changes (other than moderate grain growth in the lowermost implanted region), to a fluence of 4{\texttimes} 1020 Kr m2. To our knowledge, this is the first experimental study to reveal enhanced amorphization resistance in an irradiated, single-phase, NC material.",

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doi = "10.1063/1.2753098",

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T1 - Enhanced radiation tolerance in nanocrystalline Mg Ga2 O4

AU - Shen, Tong D.

AU - Feng, Shihai

AU - Tang, Ming

AU - Valdez, James A.

AU - Wang, Yongqiang

AU - Sickafus, Kurt E.

PY - 2007/8/2

Y1 - 2007/8/2

N2 - The authors demonstrate a substantial enhancement in radiation-induced amorphization resistance for single-phased nanocrystalline (NC) versus large-grained polycrystalline Mg Ga2 O4. NC and large-grained Mg Ga2 O4 were irradiated at ∼100 K with 300 keV Kr++ ions to fluences ranging between 5× 1019 and 4× 1020 Kr m2. Large-grained Mg Ga2 O4 samples began to amorphize by a fluence of 5× 1019 Kr m2, while NC Mg Ga2 O4 remained crystalline with no evidence for structural changes (other than moderate grain growth in the lowermost implanted region), to a fluence of 4× 1020 Kr m2. To our knowledge, this is the first experimental study to reveal enhanced amorphization resistance in an irradiated, single-phase, NC material.

AB - The authors demonstrate a substantial enhancement in radiation-induced amorphization resistance for single-phased nanocrystalline (NC) versus large-grained polycrystalline Mg Ga2 O4. NC and large-grained Mg Ga2 O4 were irradiated at ∼100 K with 300 keV Kr++ ions to fluences ranging between 5× 1019 and 4× 1020 Kr m2. Large-grained Mg Ga2 O4 samples began to amorphize by a fluence of 5× 1019 Kr m2, while NC Mg Ga2 O4 remained crystalline with no evidence for structural changes (other than moderate grain growth in the lowermost implanted region), to a fluence of 4× 1020 Kr m2. To our knowledge, this is the first experimental study to reveal enhanced amorphization resistance in an irradiated, single-phase, NC material.

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U2 - 10.1063/1.2753098

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M3 - Article

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 263115

ER -

Enhanced radiation tolerance in nanocrystalline Mg Ga2 O4

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