Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

W. Pan; K. R. Sapkota; P. Lu; A. J. Muhowski; W. M. Martinez; C. L.H. Sovinec; R. Reyna; J. P. Mendez; D. Mamaluy; S. D. Hawkins; J. F. Klem; L. S.L. Smith; D. A. Temple; Z. Enderson; Z. Jiang; E. Rossi

doi:10.1016/j.mseb.2025.118285

Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

W. Pan
, K. R. Sapkota
, P. Lu
, A. J. Muhowski
, W. M. Martinez
, C. L.H. Sovinec
, R. Reyna
, J. P. Mendez
, D. Mamaluy
, S. D. Hawkins
, J. F. Klem
, L. S.L. Smith
, D. A. Temple
, Z. Enderson
, Z. Jiang
, E. Rossi

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 10⁶ cm²/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.

Original language	English
Article number	118285
Journal	Materials Science and Engineering: B
Volume	318
DOIs	https://doi.org/10.1016/j.mseb.2025.118285
State	Published - Aug 2025
Externally published	Yes

Keywords

Antimonide heterostructures
Epitaxial aluminum
Josephson effect
Superconducting transition

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10.1016/j.mseb.2025.118285

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Pan, W., Sapkota, K. R., Lu, P., Muhowski, A. J., Martinez, W. M., Sovinec, C. L. H., Reyna, R., Mendez, J. P., Mamaluy, D., Hawkins, S. D., Klem, J. F., Smith, L. S. L., Temple, D. A., Enderson, Z., Jiang, Z., & Rossi, E. (2025). Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects. Materials Science and Engineering: B, 318, Article 118285. https://doi.org/10.1016/j.mseb.2025.118285

@article{6f61a07624684668ab84e126852e7069,

title = "Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects",

abstract = "In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 106 cm2/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.",

keywords = "Antimonide heterostructures, Epitaxial aluminum, Josephson effect, Superconducting transition",

author = "W. Pan and Sapkota, \{K. R.\} and P. Lu and Muhowski, \{A. J.\} and Martinez, \{W. M.\} and Sovinec, \{C. L.H.\} and R. Reyna and Mendez, \{J. P.\} and D. Mamaluy and Hawkins, \{S. D.\} and Klem, \{J. F.\} and Smith, \{L. S.L.\} and Temple, \{D. A.\} and Z. Enderson and Z. Jiang and E. Rossi",

note = "Publisher Copyright: {\textcopyright} 2025 Elsevier B.V.",

year = "2025",

month = aug,

doi = "10.1016/j.mseb.2025.118285",

language = "English",

volume = "318",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier Ltd.",

}

Pan, W, Sapkota, KR, Lu, P, Muhowski, AJ, Martinez, WM, Sovinec, CLH, Reyna, R, Mendez, JP, Mamaluy, D, Hawkins, SD, Klem, JF, Smith, LSL, Temple, DA, Enderson, Z, Jiang, Z & Rossi, E 2025, 'Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects', Materials Science and Engineering: B, vol. 318, 118285. https://doi.org/10.1016/j.mseb.2025.118285

TY - JOUR

T1 - Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

AU - Pan, W.

AU - Sapkota, K. R.

AU - Lu, P.

AU - Muhowski, A. J.

AU - Martinez, W. M.

AU - Sovinec, C. L.H.

AU - Reyna, R.

AU - Mendez, J. P.

AU - Mamaluy, D.

AU - Hawkins, S. D.

AU - Klem, J. F.

AU - Smith, L. S.L.

AU - Temple, D. A.

AU - Enderson, Z.

AU - Jiang, Z.

AU - Rossi, E.

PY - 2025/8

Y1 - 2025/8

N2 - In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 106 cm2/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.

AB - In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 106 cm2/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.

KW - Antimonide heterostructures

KW - Epitaxial aluminum

KW - Josephson effect

KW - Superconducting transition

UR - https://www.scopus.com/pages/publications/105002653880

U2 - 10.1016/j.mseb.2025.118285

DO - 10.1016/j.mseb.2025.118285

M3 - Article

AN - SCOPUS:105002653880

SN - 0921-5107

VL - 318

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

M1 - 118285

ER -

Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

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Keywords

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