Abstract
We fabricated and characterized disorder-free GaSb photovoltaic devices on Si. The fabrication process relies on epitaxial lift-off of pixelated GaSb membranes from GaSb substrates and their transfer onto Si. We demonstrated that our approach maintains the structural integrity and optoelectronic functionality of the GaSb absorbers after the epitaxial transfer. The performance parameters of the pixelated solar cells are V oc 0.1V, J sc 17 mA/cm 2 , FF 29% and h 1.2%, which compare favorably to the characteristics of a 5x5 mm 2 , GaSb solar cells on a GaSb substrate.
| Original language | English |
|---|---|
| Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
| Pages | 912-916 |
| Number of pages | 5 |
| DOIs | |
| State | Published - Nov 26 2018 |
| Externally published | Yes |
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