Epitaxial ternary nitride thin films prepared by a chemical solution method

Hongmei Luo; Haiyan Wang; Zhenxing Bi; David M. Feldmann; Yongqiang Wang; Anthony K. Burrell; Thomas Mark Mccleskey; Eve Bauer; Marilyn E. Hawley; Quanxi Jia

doi:10.1021/ja803544c

Epitaxial ternary nitride thin films prepared by a chemical solution method

Hongmei Luo
, Haiyan Wang
, Zhenxing Bi
, David M. Feldmann
, Yongqiang Wang
, Anthony K. Burrell
, Thomas Mark Mccleskey
, Eve Bauer
, Marilyn E. Hawley
, Quanxi Jia

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN₂ films. Epitaxial tetragonal SrTiN₂ films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

Original language	English
Pages (from-to)	15224-15225
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	130
Issue number	46
DOIs	https://doi.org/10.1021/ja803544c
State	Published - Nov 19 2008

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title = "Epitaxial ternary nitride thin films prepared by a chemical solution method",

abstract = "It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.",

author = "Hongmei Luo and Haiyan Wang and Zhenxing Bi and Feldmann, \{David M.\} and Yongqiang Wang and Burrell, \{Anthony K.\} and Mccleskey, \{Thomas Mark\} and Eve Bauer and Hawley, \{Marilyn E.\} and Quanxi Jia",

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T1 - Epitaxial ternary nitride thin films prepared by a chemical solution method

AU - Luo, Hongmei

AU - Wang, Haiyan

AU - Bi, Zhenxing

AU - Feldmann, David M.

AU - Wang, Yongqiang

AU - Burrell, Anthony K.

AU - Mccleskey, Thomas Mark

AU - Bauer, Eve

AU - Hawley, Marilyn E.

AU - Jia, Quanxi

PY - 2008/11/19

Y1 - 2008/11/19

N2 - It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

AB - It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

UR - https://www.scopus.com/pages/publications/56449118092

U2 - 10.1021/ja803544c

DO - 10.1021/ja803544c

M3 - Article

SN - 0002-7863

VL - 130

SP - 15224

EP - 15225

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 46

ER -

Epitaxial ternary nitride thin films prepared by a chemical solution method

Abstract

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