Epsilon-near-zero subwavelength optoelectronics: Electrically tunable ENZ strong coupling

Young Chul Jun; John L. Reno; Mike Sinclair; Igal Brener

Epsilon-near-zero subwavelength optoelectronics: Electrically tunable ENZ strong coupling

Young Chul Jun
, John L. Reno
, Mike Sinclair
, Igal Brener

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We demonstrate a new type of electrically tunable strong coupling between a planar metamaterial layer and an ultra-thin epsilon-near-zero layer made of a doped semiconductor. This can find novel applications in chip-scale infrared optoelectronic devices. © OSA 2013.

Original language	English
Title of host publication	CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
State	Published - Nov 21 2013
Externally published	Yes

Cite this

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title = "Epsilon-near-zero subwavelength optoelectronics: Electrically tunable ENZ strong coupling",

abstract = "We demonstrate a new type of electrically tunable strong coupling between a planar metamaterial layer and an ultra-thin epsilon-near-zero layer made of a doped semiconductor. This can find novel applications in chip-scale infrared optoelectronic devices. {\textcopyright} OSA 2013.",

author = "Jun, \{Young Chul\} and Reno, \{John L.\} and Mike Sinclair and Igal Brener",

year = "2013",

month = nov,

day = "21",

language = "English",

isbn = "9781557529725",

booktitle = "CLEO: QELS\_Fundamental Science, CLEO:QELS FS 2013",

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TY - GEN

T1 - Epsilon-near-zero subwavelength optoelectronics: Electrically tunable ENZ strong coupling

AU - Jun, Young Chul

AU - Reno, John L.

AU - Sinclair, Mike

AU - Brener, Igal

PY - 2013/11/21

Y1 - 2013/11/21

N2 - We demonstrate a new type of electrically tunable strong coupling between a planar metamaterial layer and an ultra-thin epsilon-near-zero layer made of a doped semiconductor. This can find novel applications in chip-scale infrared optoelectronic devices. © OSA 2013.

AB - We demonstrate a new type of electrically tunable strong coupling between a planar metamaterial layer and an ultra-thin epsilon-near-zero layer made of a doped semiconductor. This can find novel applications in chip-scale infrared optoelectronic devices. © OSA 2013.

UR - https://www.scopus.com/pages/publications/84887653739

M3 - Conference contribution

SN - 9781557529725

BT - CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013

ER -

Epsilon-near-zero subwavelength optoelectronics: Electrically tunable ENZ strong coupling

Abstract

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