Evaluation of the extrinsic and intrinsic stacking-fault energies of GaP

Dov Cohen; C. Barry Carter

doi:10.1080/01418619908210393

Evaluation of the extrinsic and intrinsic stacking-fault energies of GaP

Dov Cohen
, C. Barry Carter

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Stacking-fault double ribbons have been observed by transmission electron microscopy in undoped GaP films grown on Si. Values of the extrinsic and intrinsic stacking-fault energies of 40.5 ± 3 mJ m-2and 43.4 ± 2 mJ m-2respectively, were obtained from measurements of the widths of the individual ribbons. The ratio of the intrinsic to extrinsic stacking-fault energy was found to be 1.07 ±0.05. © 1999 Taylor & Francis Group, LLC.

Original language	English
Pages (from-to)	1805-1815
Number of pages	11
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	79
Issue number	8
DOIs	https://doi.org/10.1080/01418619908210393
State	Published - Jan 1 1999
Externally published	Yes

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10.1080/01418619908210393

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title = "Evaluation of the extrinsic and intrinsic stacking-fault energies of GaP",

abstract = "Stacking-fault double ribbons have been observed by transmission electron microscopy in undoped GaP films grown on Si. Values of the extrinsic and intrinsic stacking-fault energies of 40.5 ± 3 mJ m-2and 43.4 ± 2 mJ m-2respectively, were obtained from measurements of the widths of the individual ribbons. The ratio of the intrinsic to extrinsic stacking-fault energy was found to be 1.07 ±0.05. {\textcopyright} 1999 Taylor \& Francis Group, LLC.",

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AU - Carter, C. Barry

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N2 - Stacking-fault double ribbons have been observed by transmission electron microscopy in undoped GaP films grown on Si. Values of the extrinsic and intrinsic stacking-fault energies of 40.5 ± 3 mJ m-2and 43.4 ± 2 mJ m-2respectively, were obtained from measurements of the widths of the individual ribbons. The ratio of the intrinsic to extrinsic stacking-fault energy was found to be 1.07 ±0.05. © 1999 Taylor & Francis Group, LLC.

AB - Stacking-fault double ribbons have been observed by transmission electron microscopy in undoped GaP films grown on Si. Values of the extrinsic and intrinsic stacking-fault energies of 40.5 ± 3 mJ m-2and 43.4 ± 2 mJ m-2respectively, were obtained from measurements of the widths of the individual ribbons. The ratio of the intrinsic to extrinsic stacking-fault energy was found to be 1.07 ±0.05. © 1999 Taylor & Francis Group, LLC.

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U2 - 10.1080/01418619908210393

DO - 10.1080/01418619908210393

M3 - Article

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VL - 79

SP - 1805

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JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

IS - 8

ER -

Evaluation of the extrinsic and intrinsic stacking-fault energies of GaP

Abstract

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