Abstract
Careful studies of intersubband transition energies versus surface electron density have been made in Si(100) inversion layers. An observed change in slope and shift to higher energies at low densities is consistent with a recent model of a two-valley to one-valley occupancy transition driven by many-body effects. © 1981 The American Physical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 1096-1099 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 46 |
| Issue number | 16 |
| DOIs | |
| State | Published - Jan 1 1981 |
| Externally published | Yes |
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