Excitation dependence of lateral beam width in a quantum-dot laser

H. C. Schneider; W. W. Chow

doi:10.1109/LEOS.2001.968843

Excitation dependence of lateral beam width in a quantum-dot laser

H. C. Schneider
, W. W. Chow

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of quantum-dot active material on the lateral field distribution in an edge-emitting geometry was investigated. Semiconductor Bloch-equations were used to describe the optical transitions between the localized dot states in coupled quantum dot/quantum well system. The width of output beam was found to increase above threshold in quantum-dot lasers with increasing excitation whereas a decrease of beam width in quantum-well lasers occurred due to filamentation. The shifts introduced by renormalization of dot transition energies resulted in a change of position of peak gain and refractive index spectrum.

Original language	English
Pages (from-to)	403-404
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
DOIs	https://doi.org/10.1109/LEOS.2001.968843
State	Published - Jan 1 2001
Externally published	Yes

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title = "Excitation dependence of lateral beam width in a quantum-dot laser",

abstract = "The influence of quantum-dot active material on the lateral field distribution in an edge-emitting geometry was investigated. Semiconductor Bloch-equations were used to describe the optical transitions between the localized dot states in coupled quantum dot/quantum well system. The width of output beam was found to increase above threshold in quantum-dot lasers with increasing excitation whereas a decrease of beam width in quantum-well lasers occurred due to filamentation. The shifts introduced by renormalization of dot transition energies resulted in a change of position of peak gain and refractive index spectrum.",

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N2 - The influence of quantum-dot active material on the lateral field distribution in an edge-emitting geometry was investigated. Semiconductor Bloch-equations were used to describe the optical transitions between the localized dot states in coupled quantum dot/quantum well system. The width of output beam was found to increase above threshold in quantum-dot lasers with increasing excitation whereas a decrease of beam width in quantum-well lasers occurred due to filamentation. The shifts introduced by renormalization of dot transition energies resulted in a change of position of peak gain and refractive index spectrum.

AB - The influence of quantum-dot active material on the lateral field distribution in an edge-emitting geometry was investigated. Semiconductor Bloch-equations were used to describe the optical transitions between the localized dot states in coupled quantum dot/quantum well system. The width of output beam was found to increase above threshold in quantum-dot lasers with increasing excitation whereas a decrease of beam width in quantum-well lasers occurred due to filamentation. The shifts introduced by renormalization of dot transition energies resulted in a change of position of peak gain and refractive index spectrum.

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DO - 10.1109/LEOS.2001.968843

M3 - Article

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EP - 404

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -

Excitation dependence of lateral beam width in a quantum-dot laser

Abstract

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