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Excitation-induced dephasing in semiconductor quantum dots

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency dependent broadening together with nonlinear resonance shifts are needed for a microscopic explanation of the excitation induced dephasing in such a system, and that excitation induced dephasing for a quantum-dot excitonic resonance is different from quantum-well and bulk excitons.
Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number23
DOIs
StatePublished - Jan 1 2004
Externally publishedYes

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