Excitation induced polarization decay in semiconductor quantum dots

H. C. Schneider; W. W. Chow; S. W. Koch

Excitation induced polarization decay in semiconductor quantum dots

H. C. Schneider
, W. W. Chow
, S. W. Koch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed. © 2004 Optical Society of America.

Original language	English
Title of host publication	Optics InfoBase Conference Papers
State	Published - Jan 1 2005
Externally published	Yes

Cite this

@inproceedings{825b067cedcc4f61994c36bf9859d258,

title = "Excitation induced polarization decay in semiconductor quantum dots",

abstract = "Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed. {\textcopyright} 2004 Optical Society of America.",

author = "Schneider, \{H. C.\} and Chow, \{W. W.\} and Koch, \{S. W.\}",

year = "2005",

month = jan,

day = "1",

language = "English",

isbn = "1557527709",

booktitle = "Optics InfoBase Conference Papers",

}

TY - GEN

T1 - Excitation induced polarization decay in semiconductor quantum dots

AU - Schneider, H. C.

AU - Chow, W. W.

AU - Koch, S. W.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed. © 2004 Optical Society of America.

AB - Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed. © 2004 Optical Society of America.

UR - https://www.scopus.com/pages/publications/84899504405

M3 - Conference contribution

SN - 1557527709

SN - 9781557527707

BT - Optics InfoBase Conference Papers

ER -

Excitation induced polarization decay in semiconductor quantum dots

Abstract

Fingerprint

Cite this