Excitation induced polarization decay in semiconductor quantum dots

H. C. Schneider; W. W. Chow; S. W. Koch

Excitation induced polarization decay in semiconductor quantum dots

H. C. Schneider
, W. W. Chow
, S. W. Koch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed. © 2004 Optical Society of America.

Original language	English
Title of host publication	Quantum Electronics and Laser Science Conference (QELS)
Pages	540-542
Number of pages	3
Volume	1
State	Published - Oct 31 2005
Externally published	Yes

Cite this

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title = "Excitation induced polarization decay in semiconductor quantum dots",

abstract = "Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed. {\textcopyright} 2004 Optical Society of America.",

author = "Schneider, \{H. C.\} and Chow, \{W. W.\} and Koch, \{S. W.\}",

year = "2005",

month = oct,

day = "31",

language = "English",

isbn = "1557527962",

volume = "1",

pages = "540--542",

booktitle = "Quantum Electronics and Laser Science Conference (QELS)",

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TY - GEN

T1 - Excitation induced polarization decay in semiconductor quantum dots

AU - Schneider, H. C.

AU - Chow, W. W.

AU - Koch, S. W.

PY - 2005/10/31

Y1 - 2005/10/31

N2 - Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed. © 2004 Optical Society of America.

AB - Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed. © 2004 Optical Society of America.

UR - https://www.scopus.com/pages/publications/27144498929

M3 - Conference contribution

SN - 1557527962

SN - 9781557527967

VL - 1

SP - 540

EP - 542

BT - Quantum Electronics and Laser Science Conference (QELS)

ER -

Excitation induced polarization decay in semiconductor quantum dots

Abstract

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